Inventor · disambiguated record
Tsu-Hsiu Perng
Also filed as: PERNG TSU-HSIU
33 granted patents·6 pending applications·347 citations·filing 2010–2025
96Inventor score
Top patents by PatentIndex Score
39 records- 0198US11545400B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·4 cites·20 claims
- 0298US10490458B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·18 cites·20 claims
- 0397US10950731B1Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·25 cites·20 claims
- 0497US10861752B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·9 cites·20 claims
- 0597US8796759B2Fin-like field effect transistor (FinFET) device and method of manufacturing samePERNG TSU-HSIU·Filed 2010·Granted Aug 5, 2014·235 cites·19 claims
- 0695US11664268B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 0795US8987791B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·18 cites·19 claims
- 0894US11508843B1Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·2 cites·20 claims
- 0994US10510580B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·8 cites·20 claims
- 1091US11152267B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 19, 2021·4 cites·20 claims
- 1188US9601598B2Method of manufacturing a fin-like field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·7 cites·19 claims
- 1287US11855214B2Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 1387US10115624B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 30, 2018·4 cites·19 claims
- 1486US2025301691A1Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1585US12336214B2Inner spacers for gate-all-around semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 1682US11069558B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·2 cites·20 claims
- 1781US2024387358A1Methods for manufacturing an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1879US12308312B2Interconnect structure and method for manufacturing the interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 1979US11990545B2Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2078US2025374591A1Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US8921218B2Metal gate finFET device and method of fabricating thereofYANG YU-LIN·Filed 2012·Granted Dec 30, 2014·4 cites·18 claims
- 2277US2024363722A1Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2376US12094952B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 2475US12154822B2Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 2575US11637062B2Interconnect structure and method for manufacturing the interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 25, 2023·0 cites·20 claims
- 2675US2024387240A1Dummy Fin Structures and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2774US11923251B2Methods of cutting metal gates and structures formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 2874US9780216B2Combination FinFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·3 cites·20 claims
- 2973US2025267933A1Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3072US12317584B2Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 3169US11257753B2Interconnect structure and method for manufacturing the interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 3268US11626482B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 3361US9130059B2Method of fabricating a semiconductor device having a capping layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 8, 2015·1 cites·20 claims
- 3459US11222826B2FinFET structure and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·0 cites·20 claims
- 3557US10685867B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 3656US9887274B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·0 cites·20 claims
- 3755US9349841B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 24, 2016·0 cites·20 claims
- 3854US9461041B2Metal gate finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 4, 2016·0 cites·20 claims
- 3953US10483169B2FinFET cut-last process using oxide trench fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 19, 2019·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →