Inventor · disambiguated record
Yueh-Chiou Lin
Also filed as: LIN YUEH-CHIOU
12 granted patents·41 citations·filing 2006–2023
87Inventor score
Top patents by PatentIndex Score
12 records- 0193US8435824B2Backside illumination sensor having a bonding pad structure and method of making the sameTSAI SHUANG-JI·Filed 2011·Granted May 7, 2013·18 cites·20 claims
- 0287US9013022B2Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chipsLIN JENG-SHYAN·Filed 2011·Granted Apr 21, 2015·7 cites·21 claims
- 0386US9184207B2Pad structures formed in double openings in dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Nov 10, 2015·2 cites·20 claims
- 0479US7521741B2Shielding structures for preventing leakages in high voltage MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 21, 2009·9 cites·20 claims
- 0578US11996368B2Pad structure for enhanced bondabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 0677US8987855B2Pad structures formed in double openings in dielectric layersLIN JENG-SHYAN·Filed 2011·Granted Mar 24, 2015·1 cites·20 claims
- 0772US11728279B2Pad structure for enhanced bondabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 0871US9653508B2Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chipsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·1 cites·20 claims
- 0971US8664736B2Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the sameTSAI SHUANG-JI·Filed 2011·Granted Mar 4, 2014·3 cites·15 claims
- 1058US11227836B2Pad structure for enhanced bondabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·0 cites·20 claims
- 1157US10535696B2Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chipsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·0 cites·20 claims
- 1254US9362329B2Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chipsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →