Inventor · disambiguated record
Johannes Adrianus Maria De Boet
Also filed as: DE BOET JOHANNES A M · DE BOET JOHANNES ADRIANUS MARIA
7 granted patents·4 pending applications·23 citations·filing 2006–2023
79Inventor score
Top patents by PatentIndex Score
11 records- 0175US7576387B2MOS transistor and method of manufacturing a MOS transistorNXP BV·Filed 2006·Granted Aug 18, 2009·10 cites·12 claims
- 0269US8450802B2LDMOS having a field plateDE BOET JOHANNES ADRIANUS MARIA·Filed 2009·Granted May 28, 2013·8 cites·15 claims
- 0365US10685927B2Packaged RF power amplifier having a high power densityAMPLEON NETHERLANDS BV·Filed 2017·Granted Jun 16, 2020·2 cites·10 claims
- 0465US10453810B2Integrated passive device for RF power amplifier packageAMPLEON NETHERLANDS BV·Filed 2019·Granted Oct 22, 2019·1 cites·20 claims
- 0563US9019671B2Electronic device comprising RF-LDMOS transistor having improved ruggednessNXP BV·Filed 2013·Granted Apr 28, 2015·2 cites·14 claims
- 0648US2024080003A1Digital rf amplifierAMPLEON NETHERLANDS BV·Filed 2023·Application pending·0 cites
- 0745US2021336025A1Field-Effect TransistorAMPLEON NETHERLANDS BV·Filed 2021·Application pending·0 cites
- 0843US10242960B2Integrated passive device for RF power amplifier packageAMPLEON NETHERLANDS BV·Filed 2017·Granted Mar 26, 2019·0 cites·20 claims
- 0934US8891214B2ESD protection circuitDE BOET JOHANNES ADRIANUS MARIA·Filed 2012·Granted Nov 18, 2014·0 cites·8 claims
- 1034US2009267147A1Esd protected rf transistorNXP BV·Filed 2007·Application pending·0 cites
- 1133US2017085229A1Semiconductor Device and Method of Making a Semiconductor DeviceAMPLEON NETHERLANDS BV·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →