Inventor · disambiguated record
David Wu
Also filed as: MICHAEL LEGAL REPRESENTATIVE D · MICHAEL LEGAL REPRESENTATIVE DONNA · WU DAVID · WU DAVID D
50 granted patents·1,211 citations·filing 1997–2011
98Inventor score
Top patents by PatentIndex Score
50 records- 0197US6784101B1Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxationADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·205 cites·20 claims
- 0296US8003466B2Method of forming multiple fins for a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 23, 2011·91 cites·12 claims
- 0395US6351013B1Low-K sub spacer pocket formation for gate capacitance reductionADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 26, 2002·245 cites·6 claims
- 0493US7414289B2SOI Device with charging protection and methods of making sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 19, 2008·26 cites·30 claims
- 0593US6482726B1Control trimming of hard mask for sub-100 nanometer transistor gateADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 19, 2002·85 cites·20 claims
- 0693US6368926B1Method of forming a semiconductor device with source/drain regions having a deep vertical junctionADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·84 cites·30 claims
- 0792US8048753B2Charging protection deviceGLOBALFOUNDRIES INC·Filed 2009·Granted Nov 1, 2011·24 cites·8 claims
- 0890US7355201B2Test structure for measuring electrical and dimensional characteristicsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 8, 2008·19 cites·21 claims
- 0988US6586311B2Salicide block for silicon-on-insulator (SOI) applicationsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 1, 2003·49 cites·9 claims
- 1084US8050077B2Semiconductor device with transistor-based fuses and related programming methodADVANCED MICRO DEVICES INC·Filed 2009·Granted Nov 1, 2011·9 cites·8 claims
- 1182US7504270B2Methods of quantifying variations resulting from manufacturing-induced corner rounding of various features, and structures for testing sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 17, 2009·8 cites·16 claims
- 1279US6107149ACMOS semiconductor device comprising graded junctions with reduced junction capacitanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 22, 2000·51 cites·13 claims
- 1378US6921704B1Method for improving MOS mobilityADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 26, 2005·25 cites·20 claims
- 1477US6949436B2Composite spacer liner for improved transistor performanceADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 27, 2005·19 cites·8 claims
- 1576US8546855B2Charging protection deviceZHOU JINGRONG·Filed 2011·Granted Oct 1, 2013·5 cites·10 claims
- 1675US6743685B1Semiconductor device and method for lowering miller capacitance for high-speed microprocessorsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 1, 2004·16 cites·21 claims
- 1774US6872583B1Test structure for high precision analysis of a semiconductorADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 29, 2005·17 cites·16 claims
- 1874US6391751B1Method for forming vertical profile of polysilicon gate electrodesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 21, 2002·23 cites·14 claims
- 1972US6458678B1Transistor formed using a dual metal process for gate and source/drain regionADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 1, 2002·17 cites·12 claims
- 2072US5925914AAsymmetric S/D structure to improve transistor performance by reducing Miller capacitanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 20, 1999·34 cites·9 claims
- 2170US7582493B2Distinguishing between dopant and line width variation componentsADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 1, 2009·3 cites·19 claims
- 2270US7576357B1System for characterization of low-k dielectric material damageADVANCED MICRO DEVICES INC·Filed 2005·Granted Aug 18, 2009·5 cites·20 claims
- 2368US7482252B1Method for reducing floating body effects in SOI semiconductor device without degrading mobilityADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 27, 2009·11 cites·18 claims
- 2467US6727136B1Formation of ultra-shallow depth source/drain extensions for MOS transistorsADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 27, 2004·13 cites·16 claims
- 2566US7761838B2Method for fabricating a semiconductor device having an extended stress linerGLOBALFOUNDRIES INC·Filed 2007·Granted Jul 20, 2010·3 cites·24 claims
- 2665US6777281B1Maintaining LDD series resistance of MOS transistors by retarding dopant segregationADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 17, 2004·9 cites·15 claims
- 2764US6624035B1Method of forming a hard mask for halo implantsADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 23, 2003·9 cites·27 claims
- 2862US8134208B2Semiconductor device having decreased contact resistanceSHI ZHONGHAI·Filed 2007·Granted Mar 13, 2012·3 cites·5 claims
- 2962US7670938B2Methods of forming contact openingsGLOBALFOUNDRIES INC·Filed 2006·Granted Mar 2, 2010·2 cites·11 claims
- 3062US6569606B1Method of reducing photoresist shadowing during angled implantsADVANCED MICRO DEVICES INC·Filed 2000·Granted May 27, 2003·10 cites·14 claims
- 3161US7670932B2MOS structures with contact projections for lower contact resistance and methods for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Mar 2, 2010·2 cites·18 claims
- 3261US6727558B1Channel isolation using dielectric isolation structuresADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 27, 2004·9 cites·26 claims
- 3360US7271047B1Test structure and method for measuring the resistance of line-end viasADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 18, 2007·1 cites·14 claims
- 3459US7598161B2Method of forming transistor devices with different threshold voltages using halo implant shadowingADVANCED MICRO DEVICES INC·Filed 2007·Granted Oct 6, 2009·1 cites·16 claims
- 3555US6617219B1Semiconductor device and method for lowering miller capacitance by modifying source/drain extensions for high speed microprocessorsADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 9, 2003·4 cites·20 claims
- 3654US7253045B1Selective P-channel VT adjustment in SiGe system for leakage optimizationADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 7, 2007·6 cites·7 claims
- 3754US6232208B1Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profileADVANCED MICRO DEVICES INC·Filed 1998·Granted May 15, 2001·14 cites·15 claims
- 3853US7176095B1Bi-modal halo implantationADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 13, 2007·4 cites·12 claims
- 3951US7727835B2SOI device with charging protection and methods of making sameADVANCED MICRO DEVICES INC·Filed 2008·Granted Jun 1, 2010·0 cites·9 claims
- 4049US6137137ACMOS semiconductor device comprising graded N-LDD junctions with increased HCI lifetimeADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 24, 2000·12 cites·11 claims
- 4149US6114210AMethod of forming semiconductor device comprising a drain region with a graded N-LDD junction with increased HCI lifetimeADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 5, 2000·15 cites·18 claims
- 4248US5952693ACMOS semiconductor device comprising graded junctions with reduced junction capacitanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 14, 1999·12 cites·12 claims
- 4347US6864516B2SOI MOSFET junction degradation using multiple buried amorphous layersADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 8, 2005·1 cites·29 claims
- 4447US6277698B1Method of manufacturing semiconductor devices having uniform, fully doped gate electrodesADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 21, 2001·10 cites·20 claims
- 4544US7638837B2Stress enhanced semiconductor device and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2007·Granted Dec 29, 2009·0 cites·17 claims
- 4642US8329519B2Methods for fabricating a semiconductor device having decreased contact resistanceSHI ZHONGHAI·Filed 2011·Granted Dec 11, 2012·0 cites·20 claims
- 4740US7989891B2MOS structures with remote contacts and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2007·Granted Aug 2, 2011·0 cites·18 claims
- 4839US8687417B2Electronic device and method of biasingLI RUIGANG·Filed 2007·Granted Apr 1, 2014·0 cites·9 claims
- 4939US8089125B2Integrated circuit system with triodeZHU JIANHONG·Filed 2007·Granted Jan 3, 2012·0 cites·18 claims
- 5035US7087509B1Method of forming a gate electrode on a semiconductor device and a device incorporating sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 8, 2006·0 cites·20 claims
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