Inventor · disambiguated record
Peter Friedrichs
Also filed as: FRIEDRICHS PETER
21 granted patents·2 pending applications·411 citations·filing 1997–2024
95Inventor score
Files withSICED ELECT DEV GMBH & CO KG7INFINEON TECHNOLOGIES AUSTRIA3SIEMENS AG3ELLISON ALEXANDRE2INFINEON TECHNOLOGIES AUSTRIA AG2
Top patents by PatentIndex Score
23 records- 0196US7777553B2Simplified switching circuitINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Aug 17, 2010·39 cites·18 claims
- 0295US8637922B1Semiconductor deviceSIEMIENIEC RALF·Filed 2012·Granted Jan 28, 2014·28 cites·27 claims
- 0393US6936850B2Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum materialSICED ELECT DEV GMBH & CO KG·Filed 2002·Granted Aug 30, 2005·95 cites·7 claims
- 0492US6316791B1Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Nov 13, 2001·78 cites·18 claims
- 0591US6822842B2Switching device for switching at a high operating voltageSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 23, 2004·43 cites·20 claims
- 0684US7206178B2Electronic switching deviceSIEMENS AG·Filed 2001·Granted Apr 17, 2007·29 cites·53 claims
- 0779US8854087B2Electronic circuit with a reverse conducting transistor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Oct 7, 2014·5 cites·22 claims
- 0879US7646026B2SiC-PN power diodeSICED ELECT DEV GMBH & CO KG·Filed 2006·Granted Jan 12, 2010·8 cites·20 claims
- 0977US7763506B2Method for making an integrated circuit including vertical junction field effect transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jul 27, 2010·7 cites·14 claims
- 1077US7082020B2Electronic switching device and an operating method thereofSIEMENS AG·Filed 2002·Granted Jul 25, 2006·24 cites·55 claims
- 1176US2025022872A1Multi-device semiconductor chip with electrical access to devices at either sideINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1273US6693322B2Semiconductor construction with buried island region and contact regionSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Feb 17, 2004·19 cites·18 claims
- 1367US12136623B2Multi-device semiconductor chip with electrical access to devices at either sideINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Nov 5, 2024·0 cites·12 claims
- 1465US6667495B2Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configurationSCICED ELECTRONICS DEV GMBH &·Filed 2000·Granted Dec 23, 2003·15 cites·21 claims
- 1564US8803160B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2011·Granted Aug 12, 2014·0 cites·16 claims
- 1664US8102012B2Transistor component having a shielding structurePETERS DETHARD·Filed 2009·Granted Jan 24, 2012·4 cites·36 claims
- 1760US7482068B2Lightly doped silicon carbide wafer and use thereof in high power devicesNORSTEL AB·Filed 2003·Granted Jan 27, 2009·3 cites·12 claims
- 1856US8772140B2Production method for a unipolar semiconductor component and semiconductor deviceELPELT RUDOLF·Filed 2010·Granted Jul 8, 2014·1 cites·18 claims
- 1948US7071503B2Semiconductor structure with a switch element and an edge elementSICED ELECT DEV GMBH & CO KG·Filed 2004·Granted Jul 4, 2006·4 cites·19 claims
- 2045US6815351B2Method for contacting a semiconductor configurationSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 9, 2004·2 cites·12 claims
- 2141US6117751AMethod for manufacturing a mis structure on silicon carbide (SiC)SIEMENS AG·Filed 1997·Granted Sep 12, 2000·7 cites·7 claims
- 2236US8097524B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2009·Granted Jan 17, 2012·0 cites·9 claims
- 2336US2001002705A1Semiconductor configuration with an Ohmic contact-connection and method for contacting a semiconductor configurationFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →