Inventor · disambiguated record
Juang-Ke Yeh
Also filed as: YEH JUANG-KE
12 granted patents·390 citations·filing 1997–2001
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG12
Top patents by PatentIndex Score
12 records- 0190US5828605ASnapback reduces the electron and hole trapping in the tunneling oxide of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 27, 1998·95 cites·12 claims
- 0283US6055183AErase method of flash EEPROM by using snapback characteristicTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Apr 25, 2000·54 cites·16 claims
- 0382US6358796B1Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 19, 2002·46 cites·24 claims
- 0479US6049484AErase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate eraseTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 11, 2000·43 cites·20 claims
- 0579US5726933AClipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 10, 1998·43 cites·10 claims
- 0677US6060360AMethod of manufacture of P-channel EEprom and flash EEprom devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 9, 2000·37 cites·34 claims
- 0776US6246089B1P-channel EEPROM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 12, 2001·20 cites·11 claims
- 0875US6753569B2Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·18 cites·9 claims
- 0962US5903499AMethod to erase a flash EEPROM using negative gate source erase followed by a high negative gate eraseTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 11, 1999·21 cites·24 claims
- 1059US6509603B2P-channel EEPROM and flash EEPROM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jan 21, 2003·9 cites·9 claims
- 1138US6483159B1Undoped polysilicon as the floating-gate of a split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 19, 2002·0 cites·20 claims
- 1237US6121088AMethod of manufacture of undoped polysilicon as the floating-gate of a split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 19, 2000·4 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →