Inventor · disambiguated record
Glenn G. Jernigan
Also filed as: JERNIGAN GLENN · JERNIGAN GLENN G
9 granted patents·1 pending application·20 citations·filing 2011–2021
83Inventor score
Top patents by PatentIndex Score
10 records- 0185US9063063B2Low-dimensional material chemical vapor sensorsFRIEDMAN ADAM L·Filed 2013·Granted Jun 23, 2015·8 cites·9 claims
- 0274US8518491B2Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectricsGARCES NELSON·Filed 2011·Granted Aug 27, 2013·3 cites·12 claims
- 0372US9741921B2Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bitsUS GOV SEC NAVY·Filed 2016·Granted Aug 22, 2017·2 cites·6 claims
- 0469US8669168B1Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitrideSTORM DAVID F·Filed 2013·Granted Mar 11, 2014·4 cites·2 claims
- 0568US9673047B2Solid phase epitaxy of 3C—SiC on Si(001)LI CONNIE H·Filed 2015·Granted Jun 6, 2017·2 cites·6 claims
- 0664US9028919B2Epitaxial graphene surface preparation for atomic layer deposition of dielectricsGARCES NELSON·Filed 2014·Granted May 12, 2015·1 cites·6 claims
- 0753US11085830B2High speed graphene oxide bolometers and methods for manufacturing the sameUS GOV SEC NAVY·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 0852US8920877B2Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectricsGARCES NELSON·Filed 2013·Granted Dec 30, 2014·0 cites·8 claims
- 0949US10686041B2Solid phase epitaxy of 3C-SiC on Si(001)US GOV SEC NAVY·Filed 2017·Granted Jun 16, 2020·0 cites·1 claims
- 1045US2021296524A1SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSnUS GOV SEC NAVY·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →