Inventor · disambiguated record
Chun-Yao Ko
Also filed as: KO CHUN-YAO
38 granted patents·3 pending applications·94 citations·filing 2006–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21TAIWAN SEMICONDUCTOR MFG9KO PO-CHENG4LIANG VICTOR CHIANG2CHANG CHUNG-WEI1
Top patents by PatentIndex Score
41 records- 0198US11152383B2Non-volatile memory (NVM) cell structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·6 cites·20 claims
- 0296US11844213B2Non-volatile memory (NVM) cell structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
- 0396US11387242B2Non-volatile memory (NVM) cell structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
- 0494US7388187B1Cross-talk reduction through deep pixel well implant for image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 17, 2008·29 cites·20 claims
- 0592US2025365952A1Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0691US9620594B2Memory device, memory cell and memory cell layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·10 cites·20 claims
- 0791US9384815B2Mechanisms for preventing leakage currents in memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 5, 2016·8 cites·18 claims
- 0891US8368130B2Method and device to reduce dark current in image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·6 cites·20 claims
- 0982US12342538B2Non-volatile memory (NVM) cell structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 1080US9537016B1Memory device, gate stack and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 3, 2017·3 cites·20 claims
- 1178US9373627B2Multiple-time programming memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 21, 2016·2 cites·20 claims
- 1277US12477726B2Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 1377US8114752B2Structure of capacitor setLIANG VICTOR CHIANG·Filed 2010·Granted Feb 14, 2012·5 cites·20 claims
- 1477US7879639B2Method and device to reduce dark current in image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 1, 2011·3 cites·20 claims
- 1577US7732844B2Crosstalk improvement through P on N structure for image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 8, 2010·5 cites·19 claims
- 1671US10163920B2Memory device and memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 1767US8772854B2Multiple-time programming memory cells and methods for forming the sameFU CHING-HUNG·Filed 2012·Granted Jul 8, 2014·2 cites·14 claims
- 1862US9257522B2Memory architectures having dense layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·2 cites·21 claims
- 1962US8890225B2Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiencyLIAO TA-CHUAN·Filed 2011·Granted Nov 18, 2014·2 cites·25 claims
- 2060US11367731B2Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 21, 2022·0 cites·20 claims
- 2160US10784276B2Non-volatile memory and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·0 cites·20 claims
- 2260US10553597B2Memory cell including a plurality of wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·0 cites·20 claims
- 2360US8133792B2Method for reducing capacitance variation between capacitorsLIANG VICTOR-CHIANG·Filed 2006·Granted Mar 13, 2012·2 cites·26 claims
- 2457US9496302B2Crosstalk improvement through P on N structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 15, 2016·0 cites·19 claims
- 2557US9159741B2Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiencyTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 13, 2015·0 cites·20 claims
- 2657US8952442B2Multiple-time programming memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 10, 2015·0 cites·20 claims
- 2757US2024257874A1Non-volatile memory cell structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2856US9837458B2Crosstalk improvement through P on N structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·0 cites·20 claims
- 2956US9711516B2Non-volatile memory having a gate-layered triple well structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·1 cites·20 claims
- 3056US8653623B2One-time programmable devices and methods of forming the sameLIN JYUN-YING·Filed 2011·Granted Feb 18, 2014·1 cites·20 claims
- 3156US2025017004A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3253US8853079B2Fuse deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 7, 2014·0 cites·10 claims
- 3352US10141323B2Non-volatile memory and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 27, 2018·0 cites·20 claims
- 3450US12360177B2Interactive test equipment for quality evaluation of power transformerKO PO CHENG·Filed 2022·Granted Jul 15, 2025·0 cites·9 claims
- 3547US11502462B1Extension cord for polyphase voltage conversionKO PO CHENG·Filed 2021·Granted Nov 15, 2022·0 cites·13 claims
- 3647US8962439B2Memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 24, 2015·0 cites·20 claims
- 3746US12298339B2Interactive test equipment for quality evaluation of insulative electric resistance value of electric power cableKO PO CHENG·Filed 2022·Granted May 13, 2025·0 cites·4 claims
- 3846US12092700B2Interactive test equipment for quality evaluation of resistance value test for electric leakageKO PO CHENG·Filed 2022·Granted Sep 17, 2024·0 cites·7 claims
- 3946US8669133B2Crosstalk improvement through P on N structure for image sensorCHANG CHUNG-WEI·Filed 2010·Granted Mar 11, 2014·0 cites·20 claims
- 4041US10727222B2Memory system and memory cell having dense layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 28, 2020·0 cites·20 claims
- 4139US8848428B2Memory architectures having dense layoutsLU HAU-YAN·Filed 2012·Granted Sep 30, 2014·0 cites·21 claims
Join the waitlist — get patent alerts
Get an alert when Chun-Yao Ko files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →