Inventor · disambiguated record
Chi-Hsun Hsieh
Also filed as: HSIEH CHI-HSUN
10 granted patents·4 pending applications·52 citations·filing 2002–2024
87Inventor score
Top patents by PatentIndex Score
14 records- 0188US10276575B2Multi-threshold voltage field effect transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·6 cites·20 claims
- 0283US9837416B2Multi-threshold voltage field effect transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 5, 2017·4 cites·20 claims
- 0379US9048335B2Method of fabricating multiple gate stack compositionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·4 cites·7 claims
- 0477US6670226B2Planarizing method for fabricating gate electrodesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 30, 2003·20 cites·15 claims
- 0575US8466530B2Co-implant for backside illumination sensorCHEN CHENG-TSUNG·Filed 2011·Granted Jun 18, 2013·4 cites·20 claims
- 0671US8748952B2Co-implant for backside illumination sensorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 10, 2014·2 cites·20 claims
- 0768US2025167511A1Optoelectronic deviceIREACH CORP·Filed 2024·Application pending·0 cites
- 0865US7371629B2N/PMOS saturation current, HCE, and Vt stability by contact etch stop film modificationsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 13, 2008·10 cites·14 claims
- 0962US2023155349A1Semiconductor light emitting deviceIREACH CORP·Filed 2022·Application pending·0 cites
- 1058US2023005900A1Chip package structure and application thereofIREACH CORP·Filed 2022·Application pending·0 cites
- 1155US10418361B2Circuit incorporating multiple gate stack compositionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 17, 2019·0 cites·19 claims
- 1255US2022158413A1Semiconductor laserIREACH CORP·Filed 2021·Application pending·0 cites
- 1352US9378961B2Methods of fabricating multiple gate stack compositionsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 28, 2016·0 cites·20 claims
- 1445US6995064B2Halogen gettering method for forming field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 7, 2006·2 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →