Inventor · disambiguated record
Masaaki Ikegami
Also filed as: IKEGAMI MASAAKI
14 granted patents·2 pending applications·84 citations·filing 1987–2014
91Inventor score
Top patents by PatentIndex Score
16 records- 0172US5500553ASemiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processesMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 19, 1996·30 cites·7 claims
- 0266US9627383B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Apr 18, 2017·2 cites·13 claims
- 0364US9007081B2Jig for use in semiconductor test and method of measuring breakdown voltage by using the jigIKEGAMI MASAAKI·Filed 2012·Granted Apr 14, 2015·2 cites·13 claims
- 0457US8860451B2Jig for semiconductor testKAGUCHI NAOTO·Filed 2012·Granted Oct 14, 2014·1 cites·9 claims
- 0549US5470764AMethod of manufacturing a semiconductor device with hydrogen ion intercepting layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 28, 1995·11 cites·9 claims
- 0645US2017160012A1Semiconductor annealing apparatusMITSUBISHI ELECTRIC CORP·Filed 2014·Application pending·0 cites
- 0743US9472543B2Wide band gap semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Oct 18, 2016·0 cites·10 claims
- 0841US5327224ASemiconductor device with hydrogen ion intercepting layerMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 5, 1994·7 cites·13 claims
- 0941US4884120ASemiconductor device and method for making the sameMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Nov 28, 1989·11 cites·4 claims
- 1040US5956592AMethod of manufacturing a semiconductor device having polysilicon resistors with a specific resistance ratio resistant to manufacturing processesMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 21, 1999·6 cites·20 claims
- 1139US5973384ASemiconductor device including a bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 26, 1999·7 cites·9 claims
- 1237US6939802B2Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Sep 6, 2005·0 cites·3 claims
- 1336US2002155653A1Semiconductor device and method of manufacturing the semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 1435US5693543AMethod of manufacturing a semiconductor IIL device with dielectric and diffusion isolationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 2, 1997·4 cites·4 claims
- 1531US5763935ABipolar semiconductor device and fabricating method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 9, 1998·2 cites·5 claims
- 1629US5481130ASemiconductor IIL device with dielectric and diffusion isolationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 2, 1996·1 cites·10 claims
Join the waitlist — get patent alerts
Get an alert when Masaaki Ikegami files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →