Inventor · disambiguated record
Jin-Hyock Kim
Also filed as: KIM JIN-HYOCK
28 granted patents·12 pending applications·412 citations·filing 2006–2015
95Inventor score
Top patents by PatentIndex Score
40 records- 0198US7910452B2Method for fabricating a cylinder-type capacitor utilizing a connected ring structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 22, 2011·325 cites·30 claims
- 0288US8134195B2Semiconductor device and method of fabricating the sameLEE KEE-JEUNG·Filed 2008·Granted Mar 13, 2012·14 cites·36 claims
- 0387US8349636B2Method of manufacturing a phase change memory device using a cross patterning techniqueHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Jan 8, 2013·10 cites·13 claims
- 0485US7772132B2Method for forming tetragonal zirconium oxide layer and method for fabricating capacitor having the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 10, 2010·10 cites·28 claims
- 0582US7670903B2Method for fabricating a cylindrical capacitor using amorphous carbon-based layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 2, 2010·10 cites·36 claims
- 0678US8017491B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Sep 13, 2011·7 cites·32 claims
- 0778US7361544B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Apr 22, 2008·7 cites·21 claims
- 0875US8288274B2Method of forming noble metal layer using ozone reaction gasKIL DEOK-SIN·Filed 2008·Granted Oct 16, 2012·5 cites·7 claims
- 0973US7754577B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 13, 2010·4 cites·8 claims
- 1072US7781336B2Semiconductor device including ruthenium electrode and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·3 cites·13 claims
- 1171US8802536B2Phase-change memory device and method of fabricating the sameSK HYNIX INC·Filed 2013·Granted Aug 12, 2014·2 cites·16 claims
- 1269US8344346B2Semiconductor device having resistive deviceHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Jan 1, 2013·2 cites·15 claims
- 1369US7910428B2Capacitor with pillar type storage node and method for fabricating the same including conductive capping layerHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·3 cites·12 claims
- 1468US9006073B2Fabrication method of phase change memory device having self-aligned bottom electrodeSK HYNIX INC·Filed 2014·Granted Apr 14, 2015·2 cites·6 claims
- 1568US8508021B2Phase-change memory device and method of fabricating the sameLEE KEUN·Filed 2010·Granted Aug 13, 2013·2 cites·8 claims
- 1668US8441100B2Capacitor with pillar type storage node and method for fabricating the sameLEE KEE-JEUNG·Filed 2011·Granted May 14, 2013·2 cites·13 claims
- 1762US8148231B2Method of fabricating capacitorDO KWAN-WOO·Filed 2008·Granted Apr 3, 2012·1 cites·12 claims
- 1862US8035193B2Method of fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 11, 2011·2 cites·14 claims
- 1959US9112137B2Semiconductor device and method of fabricating the sameKIM JIN HYOCK·Filed 2012·Granted Aug 18, 2015·1 cites·14 claims
- 2055US10490680B2Method for manufacturing light absorption layerSK INNOVATION CO LTD·Filed 2014·Granted Nov 26, 2019·0 cites·8 claims
- 2153US9214467B2Method for fabricating capacitorSK HYNIX INC·Filed 2015·Granted Dec 15, 2015·0 cites·10 claims
- 2251US8748860B2Phase change memory device having self-aligned bottom electrode and fabrication method thereofSK HYNIX INC·Filed 2012·Granted Jun 10, 2014·0 cites·3 claims
- 2350US8048758B2Method for fabricating a capacitor utilizes the sacrificial pattern covering the cell regionHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Nov 1, 2011·0 cites·11 claims
- 2450US8048757B2Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodesHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Nov 1, 2011·0 cites·12 claims
- 2550US7816202B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 19, 2010·0 cites·27 claims
- 2648US2015318329A1Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2015·Application pending·0 cites
- 2748US2013022744A1Method of forming noble metal layer using ozone reaction gasHYNIX SEMICONDUCTOR INC·Filed 2012·Application pending·0 cites
- 2848US2015318330A1Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2015·Application pending·0 cites
- 2947US2012147519A1Electrode in semiconductor device, capacitor and method of fabricating the sameDO KWAN-WOO·Filed 2012·Application pending·0 cites
- 3047US2010096609A1Phase change memory device having a layered phase change layer composed of multiple phase change materials and method for manufacturing the sameKIM JIN HYOCK·Filed 2009·Application pending·0 cites
- 3146US8946047B2Method for fabricating capacitorKIM JIN-HYOCK·Filed 2010·Granted Feb 3, 2015·0 cites·10 claims
- 3246US8120180B2Semiconductor device including ruthenium electrode and method for fabricating the sameKIM JIN-HYOCK·Filed 2010·Granted Feb 21, 2012·0 cites·8 claims
- 3344US2009273882A1Capacitor and method for fabricating the samePARK KYUNG-WOONG·Filed 2009·Application pending·0 cites
- 3443US2013099188A1Phase-change memory device having multi-level cell and a method of manufacturing the sameKIM JIN HYOCK·Filed 2011·Application pending·0 cites
- 3543US2012009731A1Method of manufacturing phase-change random access memoryLEE KEUN·Filed 2011·Application pending·0 cites
- 3643US2009002917A1Capacitor in semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 3741US8298909B2Semiconductor device and method for fabricating the sameDO KWAN-WOO·Filed 2007·Granted Oct 30, 2012·0 cites·24 claims
- 3837US2014301137A1Phase-change memory device having phase-change region divided into multi layers and operating method thereofSK HYNIX INC·Filed 2014·Application pending·0 cites
- 3937US2015357486A1Solar cell including multiple buffer layer formed by atomic layer deposition and method of fabricating the sameSK INNOVATION CO LTD·Filed 2015·Application pending·0 cites
- 4031US2016072059A1Phase-change memory device having phase-change region divided into multi layers and operating method thereofSK HYNIX INC·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →