Inventor · disambiguated record
Yudong Kim
Also filed as: KIM YUDONG
25 granted patents·2 pending applications·372 citations·filing 1999–2018
96Inventor score
Top patents by PatentIndex Score
27 records- 0197US7534625B2Phase change memory with damascene memory elementKARPOV ILYA V·Filed 2006·Granted May 19, 2009·86 cites·9 claims
- 0295US7135696B2Phase change memory with damascene memory elementINTEL CORP·Filed 2004·Granted Nov 14, 2006·67 cites·27 claims
- 0392US8513576B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2010·Granted Aug 20, 2013·13 cites·17 claims
- 0491US9704923B1Dual-layer dielectric in memory deviceINTEL CORP·Filed 2015·Granted Jul 11, 2017·6 cites·8 claims
- 0591US6265292B1Method of fabrication of a novel flash integrated circuitINTEL CORP·Filed 1999·Granted Jul 24, 2001·81 cites·3 claims
- 0690US10629652B2Dual-layer dielectric in memory deviceINTEL CORP·Filed 2018·Granted Apr 21, 2020·5 cites·27 claims
- 0790US8952299B2Dual resistance heater for phase change devices and manufacturing method thereofMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 10, 2015·5 cites·22 claims
- 0889US7880123B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2005·Granted Feb 1, 2011·14 cites·8 claims
- 0988US8536013B2Forming phase change memory cellsKIM YUDONG·Filed 2011·Granted Sep 17, 2013·8 cites·24 claims
- 1087US7348618B2Flash memory cell having reduced floating gate to floating gate couplingINTEL CORP·Filed 2005·Granted Mar 25, 2008·10 cites·16 claims
- 1186US7465625B2Flash memory cell having reduced floating gate to floating gate couplingWOO BEEN-JON K·Filed 2006·Granted Dec 16, 2008·10 cites·10 claims
- 1286US7374996B2Structured, electrically-formed floating gate for flash memoriesKUO CHARLES·Filed 2005·Granted May 20, 2008·12 cites·10 claims
- 1385US10134809B2Dual-layer dielectric in memory deviceINTEL CORP·Filed 2017·Granted Nov 20, 2018·3 cites·7 claims
- 1484US7709822B2Phase change memory and manufacturing method thereofSTMICROELETRONICS S R L·Filed 2007·Granted May 4, 2010·12 cites·30 claims
- 1581US10048539B2Method of manufacturing backlight unit of curved display deviceSAMSUNG DISPLAY CO LTD·Filed 2015·Granted Aug 14, 2018·2 cites·15 claims
- 1672US7847333B2Structured, electrically-formed floating gate for flash memoriesKUO CHARLES·Filed 2008·Granted Dec 7, 2010·4 cites·10 claims
- 1771US7259023B2Forming phase change memory arraysINTEL CORP·Filed 2004·Granted Aug 21, 2007·21 cites·9 claims
- 1867US7973302B2Forming phase change memory cellsST MICROELECTRONICS SRL·Filed 2008·Granted Jul 5, 2011·3 cites·15 claims
- 1965US9159915B2Phase change memory with threshold switch select deviceOVONYX INC·Filed 2013·Granted Oct 13, 2015·2 cites·14 claims
- 2063US8222627B2Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory elementKUO CHARLES·Filed 2008·Granted Jul 17, 2012·2 cites·34 claims
- 2163US8026173B2Semiconductor structure, in particular phase change memory device having a uniform height heaterST MICROELECTRONICS SRL·Filed 2008·Granted Sep 27, 2011·3 cites·12 claims
- 2261US10522757B2Dual resistive-material regions for phase change memory devicesMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 31, 2019·0 cites·12 claims
- 2359US8637342B2Phase change memory with threshold switch select deviceKARPOV ILYA V·Filed 2005·Granted Jan 28, 2014·3 cites·17 claims
- 2454US10522756B2Dual resistance heater for phase change memory devicesMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 31, 2019·0 cites·8 claims
- 2548US9203024B2Copper compatible chalcogenide phase change memory with adjustable threshold voltageKIM YUDONG·Filed 2007·Granted Dec 1, 2015·0 cites·25 claims
- 2634US2007259479A1Forming phase change memory arraysKUO CHARLES C·Filed 2007·Application pending·0 cites
- 2733US2001024857A1Novel flash integrated circuit and its method of fabricationFiled 2001·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yudong Kim files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →