Inventor · disambiguated record
Cesare Clementi
Also filed as: CLEMENTI CESARE
19 granted patents·5 pending applications·376 citations·filing 1993–2005
95Inventor score
Top patents by PatentIndex Score
24 records- 0189US5856221AProcess for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding ICSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Jan 5, 1999·59 cites·17 claims
- 0284US6004847AProcess for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding ICSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Dec 21, 1999·44 cites·14 claims
- 0383US6509222B1Process for manufacturing electronic devices comprising nonvolatile memory cells of reduced dimensionsST MICROELECTRONICS SRL·Filed 2000·Granted Jan 21, 2003·23 cites·16 claims
- 0481US5422291AMethod of making an EPROM cell with a readily scalable interpoly dielectricST MICROELECTRONICS SRL·Filed 1993·Granted Jun 6, 1995·45 cites·19 claims
- 0574US6114203AMethod of manufacturing a MOS integrated circuit having components with different dielectricsST MICROELECTRONICS SRL·Filed 1996·Granted Sep 5, 2000·47 cites·12 claims
- 0671US6248630B1Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding ICSGS THOMSON MICROELECTRONICS·Filed 1999·Granted Jun 19, 2001·24 cites·6 claims
- 0770US5600166AEPROM cell with a readily scalable interpoly dielectricST MICROELECTRONICS SRL·Filed 1995·Granted Feb 4, 1997·28 cites·12 claims
- 0862US6603171B2Electronic devices with nonvolatile memory cells of reduced dimensionsST MICROELECTRONICS SRL·Filed 2002·Granted Aug 5, 2003·7 cites·5 claims
- 0960US7125808B2Method for manufacturing non-volatile memory cells on a semiconductor substrateST MICROELECTRONICS SRL·Filed 2003·Granted Oct 24, 2006·8 cites·20 claims
- 1059US5464784AMethod of fabricating integrated devicesST MICROELECTRONICS SRL·Filed 1993·Granted Nov 7, 1995·17 cites·14 claims
- 1155US6800901B2Process for the selective formation of salicide on active areas of MOS devicesST MICROELECTRONICS SRL·Filed 2002·Granted Oct 5, 2004·6 cites·12 claims
- 1255US5798279AMethod of fabricating non-volatile memories with overlapping layersSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Aug 25, 1998·17 cites·16 claims
- 1352US6492234B1Process for the selective formation of salicide on active areas of MOS devicesST MICROELECTRONICS SRL·Filed 1998·Granted Dec 10, 2002·13 cites·32 claims
- 1452US5568418ANon-volatile memory in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Oct 22, 1996·14 cites·18 claims
- 1550US6448138B1Nonvolatile floating-gate memory devices, and process of fabricationST MICROELECTRONICS SRL·Filed 2000·Granted Sep 10, 2002·4 cites·20 claims
- 1650US5977586ANon-volatile integrated low-doped drain device with partially overlapping gate regionsST MICROELECTRONICS SRL·Filed 1995·Granted Nov 2, 1999·11 cites·9 claims
- 1746US6255163B1Process for manufacturing selection transistors for nonvolatile serial-flash, EPROM, EEPROM and flash-EEPROM memories in standard or AMG configurationST MICROELECTRONICS SRL·Filed 1999·Granted Jul 3, 2001·8 cites·18 claims
- 1839US7125807B2Method for manufacturing non-volatile memory cells on a semiconductor substrateST MICROELECTRONICS SRL·Filed 2003·Granted Oct 24, 2006·1 cites·13 claims
- 1938US7326615B2Method for manufacturing electronic non-volatile memory devices integrated in a semiconductor substrateST MICROELECTRONICS SRL·Filed 2005·Granted Feb 5, 2008·0 cites·24 claims
- 2036US2003015753A1Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding ICFiled 2002·Application pending·0 cites
- 2135US2002158285A1Nonvolatile floating-gate memory devices, and process of fabricationST MICROELECTRONICS SRL·Filed 2002·Application pending·0 cites
- 2232US2004188757A1Method for forming structures self-aligned with each other on a semiconductor substrateFiled 2003·Application pending·0 cites
- 2331US2004179392A1Non-volatile memory cell comprising dielectriclayers having a low dielectric constant and corresponding manufacturing processFiled 2003·Application pending·0 cites
- 2430US2002000636A1Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding icFiled 1998·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →