Inventor · disambiguated record
Sang-Don Nam
Also filed as: NAM SANG YONG · NAM SANG-DON
17 granted patents·8 pending applications·430 citations·filing 1999–2013
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD16AHN SANG HOON3IL YANG PHARM CO LTD1NAM SANG-DON1SAMUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
25 records- 0197US6380579B1Capacitor of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 30, 2002·172 cites·11 claims
- 0295US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0392US7560760B2Ferroelectric memory devices having expanded plate linesSAMUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·22 cites·12 claims
- 0492US6500763B2Method for manufacturing an electrode of a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 31, 2002·72 cites·27 claims
- 0587US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 0685US6248640B1Method for forming capacitor of semiconductor device using high temperature oxidationSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 19, 2001·78 cites·10 claims
- 0771US6844583B2Ferroelectric memory devices having expanded plate linesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 18, 2005·13 cites·32 claims
- 0868US9224593B2Method of manufacturing a semiconductor device having a porous, low-k dielectric layerAHN SANG-HOON·Filed 2011·Granted Dec 29, 2015·2 cites·5 claims
- 0964US7622379B2Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 24, 2009·3 cites·15 claims
- 1063US8298910B2Method of fabricating semiconductor deviceNAM SANG-DON·Filed 2010·Granted Oct 30, 2012·2 cites·10 claims
- 1163US7517703B2Method for forming ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·2 cites·9 claims
- 1262US6952028B2Ferroelectric memory devices with expanded plate line and methods in fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 4, 2005·11 cites·33 claims
- 1356US7208367B2Methods of fabricating ferroelectric memory devices having expanded plate linesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 24, 2007·2 cites·45 claims
- 1454US8569862B2Integrated circuit devices with crack-resistant fuse structuresSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 29, 2013·0 cites·4 claims
- 1553US2007158731A1Memory Devices Employing Ferroelectric Layer as Information Storage Elements and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1649US8404579B2Methods of forming integrated circuit devices with crack-resistant fuse structuresAHN SANG-HOON·Filed 2010·Granted Mar 26, 2013·0 cites·19 claims
- 1749US2011071302A1Process for preparing intermediate compound for synthesizing an antiulcerantIL YANG PHARM CO LTD·Filed 2008·Application pending·0 cites
- 1842US8524615B2Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layerAHN SANG-HOON·Filed 2011·Granted Sep 3, 2013·0 cites·20 claims
- 1942US2006076641A1Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2039US2006027848A1Ferroelectric memory device and method of forming the sameSON YOON-HO·Filed 2005·Application pending·0 cites
- 2139US2011263117A1Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
- 2236US7285810B2Ferroelectric memory devices having expanded plate linesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 23, 2007·0 cites·15 claims
- 2336US2005185486A9Ferroelectric memory devices including protection adhesion layers and methods of forming the sameFiled 2003·Application pending·0 cites
- 2434US2003150795A1Polymer blends and methods of separation using the sameFiled 2003·Application pending·0 cites
- 2533US2003057464A1Ferroelectric memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →