Inventor · disambiguated record
David B. Spratt
Also filed as: SPRATT DAVID · SPRATT DAVID B
19 granted patents·1 pending application·448 citations·filing 1984–2006
96Inventor score
Top patents by PatentIndex Score
20 records- 0187US6143594AOn-chip ESD protection in dual voltage CMOSTEXAS INSTRUMENTS INC·Filed 2000·Granted Nov 7, 2000·40 cites·5 claims
- 0286US4891103AAnadization system with remote voltage sensing and active feedback control capabilitiesTEXAS INSTRUMENTS INC·Filed 1988·Granted Jan 2, 1990·37 cites·16 claims
- 0377US4628591AMethod for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous siliconTEXAS INSTRUMENTS INC·Filed 1984·Granted Dec 16, 1986·43 cites·7 claims
- 0472US4897703ARecessed contact bipolar transistor and methodTEXAS INSTRUMENTS INC·Filed 1988·Granted Jan 30, 1990·25 cites·11 claims
- 0571US6137144AOn-chip ESD protection in dual voltage CMOSTEXAS INSTRUMENTS INC·Filed 1999·Granted Oct 24, 2000·27 cites·6 claims
- 0670US4985744AMethod for forming a recessed contact bipolar transistor and field effect transistorTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 15, 1991·27 cites·5 claims
- 0770US4962053ABipolar transistor fabrication utilizing CMOS techniquesTEXAS INSTRUMENTS INC·Filed 1989·Granted Oct 9, 1990·26 cites·20 claims
- 0867US5284788AMethod and device for controlling current in a circuitTEXAS INSTRUMENTS INC·Filed 1992·Granted Feb 8, 1994·31 cites·20 claims
- 0967US4810667ADielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layerTEXAS INSTRUMENTS INC·Filed 1987·Granted Mar 7, 1989·34 cites·9 claims
- 1064US5316957AMethod of forming a recessed contact bipolar transistorTEXAS INSTRUMENTS INC·Filed 1993·Granted May 31, 1994·21 cites·16 claims
- 1164US5075241AMethod of forming a recessed contact bipolar transistor and field effect deviceTEXAS INSTRUMENTS INC·Filed 1990·Granted Dec 24, 1991·25 cites·8 claims
- 1260US4849370AAnodizable strain layer for SOI semiconductor structuresTEXAS INSTRUMENTS INC·Filed 1987·Granted Jul 18, 1989·25 cites·15 claims
- 1357US4982263AAnodizable strain layer for SOI semiconductor structuresTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 1, 1991·23 cites·13 claims
- 1457US2007124854A1Foam toilet seat coverSPRATT DAVID·Filed 2006·Application pending·0 cites
- 1552US4897698AHorizontal structure thin film transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Jan 30, 1990·16 cites·7 claims
- 1651US5434432AAntifuse device for controlling current in a circuit using an antifuseTEXAS INSTRUMENTS INC·Filed 1993·Granted Jul 18, 1995·15 cites·7 claims
- 1750US5041394AMethod for forming protective barrier on silicided regionsTEXAS INSTRUMENTS INC·Filed 1991·Granted Aug 20, 1991·13 cites·18 claims
- 1845US5065209ABipolar transistor fabrication utilizing CMOS techniquesTEXAS INSTRUMENTS INC·Filed 1990·Granted Nov 12, 1991·10 cites·11 claims
- 1943US6548337B2Method of manufacturing a high gain bipolar junction transistor with counterdoped base in CMOS technologyTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 15, 2003·2 cites·14 claims
- 2035US5019525AMethod for forming a horizontal self-aligned transistorTEXAS INSTRUMENTS INC·Filed 1990·Granted May 28, 1991·8 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →