Inventor · disambiguated record
Masahiko Niwayama
Also filed as: NIWAYAMA MASAHIKO
22 granted patents·2 pending applications·102 citations·filing 1996–2019
94Inventor score
Files withPANASONIC CORP6MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5MATSUSHITA ELECTRONICS CORP4NIWAYAMA MASAHIKO3KUDOU CHIAKI2
Top patents by PatentIndex Score
24 records- 0185US8686439B2Silicon carbide semiconductor elementTAKAHASHI KUNIMASA·Filed 2012·Granted Apr 1, 2014·8 cites·8 claims
- 0281US9029874B2Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layerPANASONIC CORP·Filed 2013·Granted May 12, 2015·6 cites·19 claims
- 0376US8772788B2Semiconductor element and method of manufacturing thereofIKEGAMI RYO·Filed 2012·Granted Jul 8, 2014·6 cites·23 claims
- 0472US8754422B2Semiconductor device and process for production thereofKUDOU CHIAKI·Filed 2010·Granted Jun 17, 2014·3 cites·16 claims
- 0572US8653535B2Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereofKUDOU CHIAKI·Filed 2011·Granted Feb 18, 2014·4 cites·15 claims
- 0670US7638782B2Semiconductor device manufacturing method and ion implanter used thereinPANASONIC CORP·Filed 2005·Granted Dec 29, 2009·2 cites·14 claims
- 0770US6875623B2Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 5, 2005·12 cites·20 claims
- 0869US8748901B1Silicon carbide semiconductor elementPANASONIC CORP·Filed 2014·Granted Jun 10, 2014·2 cites·9 claims
- 0967US9209262B2Silicon carbide semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2013·Granted Dec 8, 2015·2 cites·7 claims
- 1065US6633047B2Apparatus and method for introducing impurityMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Oct 14, 2003·8 cites·6 claims
- 1164US7291535B2Method and apparatus for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 6, 2007·9 cites·10 claims
- 1263US8222107B2Method for producing semiconductor elementTANAKA KOUTAROU·Filed 2010·Granted Jul 17, 2012·2 cites·6 claims
- 1361US8058631B2Semiconductor manufacturing apparatusNIWAYAMA MASAHIKO·Filed 2009·Granted Nov 15, 2011·2 cites·36 claims
- 1461US7759711B2Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Jul 20, 2010·2 cites·12 claims
- 1560US7851871B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Dec 14, 2010·1 cites·2 claims
- 1647US6451674B1Method for introducing impurity into a semiconductor substrate without negative charge buildup phenomenonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 17, 2002·11 cites·5 claims
- 1744US11366022B2Semiconductor device having a temperature sensorPANASONIC IP MAN CO LTD·Filed 2019·Granted Jun 21, 2022·0 cites·11 claims
- 1844US2008166822A1Semiconductor manufacturing apparatusNIWAYAMA MASAHIKO·Filed 2007·Application pending·0 cites
- 1940US6046069ASolid-state image pick-up device and method for manufacturing the sameMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Apr 4, 2000·7 cites·4 claims
- 2040US6025210ASolid-state imaging device and method of manufacturing the sameMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Feb 15, 2000·7 cites·3 claims
- 2140US2005266649A1Electronic device manufacturing apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 2238US8878194B2Semiconductor element, semiconductor device, and semiconductor element manufacturing methodNIWAYAMA MASAHIKO·Filed 2012·Granted Nov 4, 2014·0 cites·12 claims
- 2337US5786607ASolid-state image pick-up device and method for manufacturing the sameMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Jul 28, 1998·6 cites·8 claims
- 2432US5869854ASolid-state imaging device and method of manufacturing the sameMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Feb 9, 1999·2 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →