Inventor · disambiguated record
Sang-Pil Sim
Also filed as: SIM SANG-PIL
30 granted patents·5 pending applications·534 citations·filing 1993–2024
97Inventor score
Top patents by PatentIndex Score
35 records- 0198US8878309B1Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 4, 2014·105 cites·25 claims
- 0297US8836046B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2013·Granted Sep 16, 2014·19 cites·20 claims
- 0394US9379106B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 28, 2016·18 cites·22 claims
- 0489US5447878AMethod for manufacturing a semiconductor memory device having a capacitor with increased effective areaSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Sep 5, 1995·107 cites·13 claims
- 0588US12336242B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 0688US9141751B2Method of forming a patternSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 0788US5399518AMethod for manufacturing a multiple walled capacitor of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Mar 21, 1995·88 cites·4 claims
- 0885US10002943B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 19, 2018·4 cites·20 claims
- 0983US10269928B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·8 claims
- 1082US7397704B2Flash memory device and program method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·11 cites·12 claims
- 1180US6399476B2Multilayer passivation process for forming air gaps within a dielectric between interconnectionsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 4, 2002·66 cites·11 claims
- 1278US7586135B2Multilevel integrated circuit devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·7 cites·21 claims
- 1377US9536881B2Semiconductor devices having fin shaped channelsMAEDA SHIGENOBU·Filed 2014·Granted Jan 3, 2017·4 cites·10 claims
- 1475US11955517B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·19 claims
- 1575US9419077B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2014·Granted Aug 16, 2016·1 cites·18 claims
- 1675US7652925B2Flash memory device and program method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 26, 2010·7 cites·12 claims
- 1767US10861934B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 1866US10319814B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 11, 2019·0 cites·17 claims
- 1964US9627483B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2014·Granted Apr 18, 2017·0 cites·9 claims
- 2061US5597763AMethod for manufacturing a semiconductor wiring structure including a self-aligned contact holeSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jan 28, 1997·24 cites·7 claims
- 2158US7531409B2Fabrication method and structure for providing a recessed channel in a nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·1 cites·11 claims
- 2256US6097078AMethod for forming triple well in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 1, 2000·21 cites·22 claims
- 2353US7271436B2Flash memory devices including a pass transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 18, 2007·5 cites·20 claims
- 2450US5567989AHighly integrated semiconductor wiring structureSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Oct 22, 1996·15 cites·7 claims
- 2550US2009200596A1Fabrication method and structure for providing a recessed channel in a nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2648US7075142B2Cell arrays of memory devices having extended source strapping regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·3 cites·21 claims
- 2745US5915189AManufacturing method for semiconductor memory device having a storage node with surface irregularitiesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 22, 1999·9 cites·8 claims
- 2844US2016184439A1Orally disintegrating film preparation containing donepezil or pharmaceutically acceptable salt thereof, and preparation method thereforSEOUL PHARMA CO LTD·Filed 2014·Application pending·0 cites
- 2943US9502413B2Semiconductor devices including raised source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·9 claims
- 3043US2013320457A1Semiconductor devices including source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3141US7276415B2Contactless nonvolatile memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 2, 2007·0 cites·7 claims
- 3238US2014159158A1Semiconductor DevicesKIM HO-JUN·Filed 2013·Application pending·0 cites
- 3336US6117773AMethods of fabricating microelectronic devices having increased impurity concentration between a metal silicide contact surfaceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 12, 2000·4 cites·31 claims
- 3435US2007268749A1Method for operating non-volatile memory deviceKIM DAE-MANN·Filed 2007·Application pending·0 cites
- 3534US6025617AMicroelectronic devices having increased impurity concentration between a metal silicide contact surfaceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Feb 15, 2000·3 cites·11 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →