Inventor · disambiguated record
Qiuxia Xu
Also filed as: XU QIUXIA
49 granted patents·13 pending applications·172 citations·filing 2010–2021
97Inventor score
Files withYIN HUAXIANG22INST OF MICROELECTRONICS CAS17XU QIUXIA11ZHOU HUAJIE6SHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE3
Top patents by PatentIndex Score
62 records- 0194US8361869B2Method for manufacturing suspended fin and gate-all-around field effect transistorINST OF MICROELECTRONICS CAS·Filed 2011·Granted Jan 29, 2013·25 cites·19 claims
- 0290US9391073B2FinFET device and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2013·Granted Jul 12, 2016·13 cites·9 claims
- 0389US8932927B2Semiconductor structure and method for manufacturing the sameZHOU HUAJIE·Filed 2011·Granted Jan 13, 2015·13 cites·10 claims
- 0488US8652891B1Semiconductor device and method of manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Feb 18, 2014·10 cites·9 claims
- 0588US8466028B2Method for manufacturing multigate deviceYIN HUAXIANG·Filed 2011·Granted Jun 18, 2013·10 cites·8 claims
- 0687US8367558B2Method for tuning the work function of a metal gate of the PMOS deviceINST OF MICROELECTRONICS CAS·Filed 2010·Granted Feb 5, 2013·9 cites·10 claims
- 0786US8384162B2Device having adjustable channel stress and method thereofINST OF MICROELECTRONICS CAS·Filed 2011·Granted Feb 26, 2013·7 cites·11 claims
- 0886US8298927B2Method of adjusting metal gate work function of NMOS deviceXU QIUXIA·Filed 2010·Granted Oct 30, 2012·9 cites·11 claims
- 0985US9373622B2CMOS device with improved accuracy of threshold voltage adjustment and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2015·Granted Jun 21, 2016·5 cites·9 claims
- 1084US8754482B2Semiconductor device and manufacturing method thereofYIN HUAXIANG·Filed 2011·Granted Jun 17, 2014·6 cites·20 claims
- 1184US8389367B2Method for manufacturing a semiconductor deviceZHOU HUAJIE·Filed 2011·Granted Mar 5, 2013·8 cites·9 claims
- 1282US8778744B2Method for manufacturing semiconductor field effect transistorZHOU HUAJIE·Filed 2011·Granted Jul 15, 2014·7 cites·11 claims
- 1381US11217694B2Field-effect transistor and method for manufacturing the sameSHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE·Filed 2020·Granted Jan 4, 2022·1 cites·36 claims
- 1481US9384986B2Dual-metal gate CMOS devices and method for manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Jul 5, 2016·6 cites·10 claims
- 1580US8994119B2Semiconductor device with gate stacks having stress and method of manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Mar 31, 2015·6 cites·19 claims
- 1677US8258063B2Method for manufacturing a metal gate electrode/high K dielectric gate stackXU QIUXIA·Filed 2010·Granted Sep 4, 2012·4 cites·9 claims
- 1774US9136181B2Method for manufacturing semiconductor deviceINST OF MICROELECTRONICS CAS·Filed 2012·Granted Sep 15, 2015·3 cites·20 claims
- 1873US8748250B2Method for integration of dual metal gates and dual high-K dielectrics in CMOS devicesXU QIUXIA·Filed 2011·Granted Jun 10, 2014·4 cites·9 claims
- 1972US8163620B2Method for etching Mo-based metal gate stack with aluminium nitride barrierLI YONGLIANG·Filed 2010·Granted Apr 24, 2012·4 cites·7 claims
- 2071US8664119B2Semiconductor device manufacturing methodYIN HUAXIANG·Filed 2011·Granted Mar 4, 2014·3 cites·18 claims
- 2169US9196706B2Method for manufacturing P-type MOSFETINST OF MICROELECTRONICS CAS·Filed 2012·Granted Nov 24, 2015·2 cites·14 claims
- 2268US9276085B2Semiconductor structure and method for manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Mar 1, 2016·3 cites·8 claims
- 2368US8324061B2Method for manufacturing semiconductor deviceYIN HUAXIANG·Filed 2011·Granted Dec 4, 2012·2 cites·15 claims
- 2466US8334205B2Method for removing polymer after etching gate stack structure of high-K gate dielectric/metal gateXU QIUXIA·Filed 2011·Granted Dec 18, 2012·2 cites·11 claims
- 2564US9049061B2CMOS device and method for manufacturing the sameXU QIUXIA·Filed 2012·Granted Jun 2, 2015·1 cites·6 claims
- 2664US7960235B1Method for manufacturing a MOSFET with a surrounding gate of bulk SiINST OF MICROELECTRONICS CHINESE ACADEMY·Filed 2010·Granted Jun 14, 2011·3 cites·10 claims
- 2763US11694901B2Field-effect transistor and method for manufacturing the sameSHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE·Filed 2021·Granted Jul 4, 2023·0 cites·28 claims
- 2862US10068990B2Method of manufacturing MOS transistor with stack of cascaded nanowiresYIN HUAXIANG·Filed 2013·Granted Sep 4, 2018·1 cites·13 claims
- 2962US9548387B2Semiconductor device and method of manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Jan 17, 2017·1 cites·5 claims
- 3062US9252059B2Method for manufacturing semiconductor deviceINST OF MICROELECTRONICS CAS·Filed 2012·Granted Feb 2, 2016·1 cites·21 claims
- 3162US8598002B2Method for manufacturing metal gate stack structure in gate-first processXU QIUXIA·Filed 2011·Granted Dec 3, 2013·1 cites·9 claims
- 3261US9312187B2Semiconductor device and method of manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Apr 12, 2016·1 cites·9 claims
- 3359US9899270B2Methods for manufacturing semiconductor devicesINST OF MICROELECTRONICS CAS·Filed 2012·Granted Feb 20, 2018·1 cites·14 claims
- 3450US11387149B2Semiconductor device and method for forming gate structure thereofSHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE·Filed 2020·Granted Jul 12, 2022·0 cites·19 claims
- 3546US9934975B2N-type MOSFET and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2014·Granted Apr 3, 2018·0 cites·18 claims
- 3644US8278026B2Method for improving electron-beamXU QIUXIA·Filed 2011·Granted Oct 2, 2012·0 cites·7 claims
- 3743US9281398B2Semiconductor structure and method for manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Mar 8, 2016·0 cites·8 claims
- 3843US8652893B2Semiconductor device and manufacturing method thereofYIN HUAXIANG·Filed 2011·Granted Feb 18, 2014·0 cites·12 claims
- 3942US8338084B2Patterning methodXU QIUXIA·Filed 2010·Granted Dec 25, 2012·0 cites·9 claims
- 4041US10056261B2P type MOSFETINST OF MICROELECTRONICS CAS·Filed 2012·Granted Aug 21, 2018·0 cites·4 claims
- 4141US2015011069A1Method for manufacturing p-type mosfetINST OF MICROELECTRONICS CAS·Filed 2012·Application pending·0 cites
- 4241US2014231923A1Semiconductor structure and method for manufacturing the sameYIN HUAXIANG·Filed 2012·Application pending·0 cites
- 4341US2015325684A1Manufacturing method of n-type mosfetINST OF MICROELECTRONICS CAS·Filed 2012·Application pending·0 cites
- 4440US9029225B2Method for manufacturing N-type MOSFETINST OF MICROELECTRONICS CAS·Filed 2012·Granted May 12, 2015·0 cites·12 claims
- 4540US8895374B2Semiconductor field-effect transistor structure and method for manufacturing the sameZHOU HUAJIE·Filed 2011·Granted Nov 25, 2014·0 cites·10 claims
- 4640US8703617B2Method for planarizing interlayer dielectric layerYIN HUAXIANG·Filed 2011·Granted Apr 22, 2014·0 cites·10 claims
- 4740US2013285127A1semiconductor structure and method of manufacturing the sameYIN HUAXIANG·Filed 2012·Application pending·0 cites
- 4839US2013240996A1Semiconductor Device and Method of Manufacturing the SameYIN HUAXIANG·Filed 2012·Application pending·0 cites
- 4939US2015048458A1Semiconductor device and manufacturing method thereofINST OF MICROELECTRONICS CAS·Filed 2012·Application pending·0 cites
- 5038US8574977B2Method for manufacturing stack structure of PMOS device and adjusting gate work functionXU QIUXIA·Filed 2011·Granted Nov 5, 2013·0 cites·10 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →