Inventor · disambiguated record
Yann Lamy
Also filed as: LAMY YANN · LAMY YANN PIERRE ROGER
10 granted patents·3 pending applications·22 citations·filing 2006–2023
83Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE8BESLING WILLEM FREDERIK ADRIANUS1COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT1NXP BV1
Top patents by PatentIndex Score
13 records- 0176US9536837B2TSV via provided with a stress release structure and its fabrication methodCOMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2012·Granted Jan 3, 2017·5 cites·13 claims
- 0272US7986184B2Radio frequency amplifier with effective decouplingNXP BV·Filed 2009·Granted Jul 26, 2011·9 cites·13 claims
- 0371US9536845B2Device for radiofrequency (RF) transmission with an integrated electromagnetic wave reflectorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jan 3, 2017·3 cites·20 claims
- 0465US9230923B2Electronic chip with means of protecting its back faceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jan 5, 2016·3 cites·17 claims
- 0564US9728337B2Method for producing a capacitorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Aug 8, 2017·1 cites·26 claims
- 0659US11171158B2SOI substrate compatible with the RFSOI and FDSOI technologiesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 9, 2021·0 cites·7 claims
- 0759US9520366B2Chip comprising a phase change material based protecting device and a method of manufacturing the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 13, 2016·1 cites·15 claims
- 0857US2024178161A1Electronic deviceCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 0953US10586810B2SOI substrate compatible with the RFSOI and FDSOI technologiesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Mar 10, 2020·0 cites·7 claims
- 1053US2024203962A1Electronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1149US8455357B2Method of plating through wafer vias in a wafer for 3D packagingBESLING WILLEM FREDERIK ADRIANUS·Filed 2009·Granted Jun 4, 2013·0 cites·14 claims
- 1246US2010013060A1Method of forming a conductive trench in a silicon wafer and silicon wafer comprising such trenchTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 1337US7385469B2Integrated microelectronics component for filtering electromagnetic noise and radio frequency transmission circuit comprising sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 10, 2008·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →