Inventor · disambiguated record
Joerg Appenzeller
Also filed as: APPENZELLER JOERG
25 granted patents·1 pending application·451 citations·filing 2002–2022
97Inventor score
Top patents by PatentIndex Score
26 records- 0199US6891227B2Self-aligned nanotube field effect transistor and method of fabricating sameIBM·Filed 2002·Granted May 10, 2005·178 cites·9 claims
- 0296US7955931B2Method and apparatus for fabricating a carbon nanotube transistorIBM·Filed 2010·Granted Jun 7, 2011·18 cites·20 claims
- 0395US8637374B2Method of fabricating self-aligned nanotube field effect transistorAPPENZELLER JOERG·Filed 2012·Granted Jan 28, 2014·15 cites·4 claims
- 0493US8138491B2Self-aligned nanotube field effect transistorAPPENZELLER JOERG·Filed 2009·Granted Mar 20, 2012·18 cites·3 claims
- 0590US7635856B2Vertical nanotube field effect transistorIBM·Filed 2007·Granted Dec 22, 2009·11 cites·9 claims
- 0690US7141727B1Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristicsIBM·Filed 2005·Granted Nov 28, 2006·25 cites·18 claims
- 0789US7897960B2Self-aligned nanotube field effect transistorIBM·Filed 2009·Granted Mar 1, 2011·10 cites·8 claims
- 0889US7180107B2Method of fabricating a tunneling nanotube field effect transistorIBM·Filed 2004·Granted Feb 20, 2007·54 cites·30 claims
- 0987US9190135B2Organic ferroelectric material based random access memoryAPPENZELLER JOERG·Filed 2012·Granted Nov 17, 2015·10 cites·10 claims
- 1086US7948050B2Core-shell nanowire transistorIBM·Filed 2007·Granted May 24, 2011·7 cites·8 claims
- 1184US7786466B2Carbon nanotube based integrated semiconductor circuitIBM·Filed 2008·Granted Aug 31, 2010·17 cites·17 claims
- 1283US8211741B2Carbon nanotube based integrated semiconductor circuitAPPENZELLER JOERG·Filed 2011·Granted Jul 3, 2012·10 cites·4 claims
- 1383US8017934B2Carbon nanotube based integrated semiconductor circuitIBM·Filed 2010·Granted Sep 13, 2011·10 cites·19 claims
- 1483US7482232B2Method for fabricating a nanotube field effect transistorIBM·Filed 2006·Granted Jan 27, 2009·16 cites·1 claims
- 1580US7183568B2Piezoelectric array with strain dependant conducting elements and method thereforIBM·Filed 2002·Granted Feb 27, 2007·26 cites·8 claims
- 1678US8835238B2Semiconductor nanostructures, semiconductor devices, and methods of making sameIBM·Filed 2014·Granted Sep 16, 2014·2 cites·16 claims
- 1776US7253065B2Self-aligned nanotube field effect transistor and method of fabricating sameIBM·Filed 2004·Granted Aug 7, 2007·13 cites·9 claims
- 1873US9041440B2Graphene-based frequency triplerPURDUE RESEARCH FOUNDATION·Filed 2014·Granted May 26, 2015·3 cites·15 claims
- 1971US10756263B2Phase transition based resistive random-access memoryPURDUE RESEARCH FOUNDATION·Filed 2018·Granted Aug 25, 2020·3 cites·8 claims
- 2071US8765539B2Semiconductor nanostructures, semiconductor devices, and methods of making sameIBM·Filed 2014·Granted Jul 1, 2014·1 cites·19 claims
- 2171US7851783B2Method and apparatus for fabricating a carbon nanotube transistorIBM·Filed 2008·Granted Dec 14, 2010·2 cites·13 claims
- 2269US8637361B2Semiconductor nanostructures, semiconductor devices, and methods of making sameAPPENZELLER JOERG·Filed 2011·Granted Jan 28, 2014·1 cites·15 claims
- 2369US8362582B2Semiconductor nanostructures, semiconductor devices, and methods of making sameIBM·Filed 2011·Granted Jan 29, 2013·1 cites·4 claims
- 2464US12080808B2Cross-coupled gated tunnel diode (XTD) device with increased peak-to-valley current ratio (PVCR)PURDUE RESEARCH FOUNDATION·Filed 2022·Granted Sep 3, 2024·0 cites·21 claims
- 2549US2020388754A1Phase transition based resistive random-access memoryPURDUE RESEARCH FOUNDATION·Filed 2020·Application pending·0 cites
- 2636US10505109B1Phase transition based resistive random-access memoryPURDUE RESEARCH FOUNDATION·Filed 2018·Granted Dec 10, 2019·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →