Inventor · disambiguated record
Koji Uematsu
Also filed as: UEMATSU KOJI
72 granted patents·15 pending applications·1,095 citations·filing 2001–2022
99Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES47UEMATSU KOJI10FUJIWARA SHINSUKE6KOMATSU MFG CO LTD5KOBE STEEL LTD2
Top patents by PatentIndex Score
87 records- 0199US7390359B2Nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jun 24, 2008·276 cites·6 claims
- 0299US7303630B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Dec 4, 2007·291 cites·42 claims
- 0396US8404042B2Group-III nitride crystal compositeMIZUHARA NAHO·Filed 2012·Granted Mar 26, 2013·28 cites·20 claims
- 0496US7473315B2AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jan 6, 2009·23 cites·92 claims
- 0595US7772585B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 10, 2010·24 cites·23 claims
- 0695US6667184B2Single crystal GaN substrate, method of growing same and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Dec 23, 2003·74 cites·42 claims
- 0794US8352145B2Traction control deviceKOMATSU MFG CO LTD·Filed 2011·Granted Jan 8, 2013·11 cites·3 claims
- 0894US7589000B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Sep 15, 2009·20 cites·4 claims
- 0993US7732236B2III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jun 8, 2010·20 cites·14 claims
- 1092US8463511B2Traction control deviceUEMATSU KOJI·Filed 2009·Granted Jun 11, 2013·14 cites·4 claims
- 1191US8258051B2Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystalMIZUHARA NAHO·Filed 2009·Granted Sep 4, 2012·14 cites·8 claims
- 1291US7771532B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Aug 10, 2010·14 cites·28 claims
- 1391US7528055B2Method of producing a nitride semiconductor device and nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 5, 2009·15 cites·68 claims
- 1489US7869927B2Retarder control device for working vehicleKOMATSU MFG CO LTD·Filed 2006·Granted Jan 11, 2011·14 cites·6 claims
- 1588US12429250B2Heat-collecting member and agricultural houseKOBE STEEL LTD·Filed 2022·Granted Sep 30, 2025·1 cites·26 claims
- 1686US7998847B2III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Aug 16, 2011·9 cites·9 claims
- 1786US7112826B2Single crystal GaN substrate semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Sep 26, 2006·29 cites·30 claims
- 1885US8823142B2GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)SUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 2, 2014·5 cites·3 claims
- 1985US8524575B2Group III nitride crystal and method for producing the sameUEMATSU KOJI·Filed 2011·Granted Sep 3, 2013·5 cites·8 claims
- 2084US9145127B2Traction control deviceUEMATSU KOJI·Filed 2011·Granted Sep 29, 2015·10 cites·16 claims
- 2184US8697564B2Method of manufacturing GaN-based filmFUJIWARA SHINSUKE·Filed 2011·Granted Apr 15, 2014·2 cites·4 claims
- 2283US8598685B2GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereofFUJIWARA SHINSUKE·Filed 2010·Granted Dec 3, 2013·5 cites·15 claims
- 2382US8872309B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 28, 2014·3 cites·3 claims
- 2482US7691732B2Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Apr 6, 2010·8 cites·8 claims
- 2581US10600676B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 24, 2020·2 cites·14 claims
- 2681US8709923B2Method of manufacturing III-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 29, 2014·3 cites·6 claims
- 2781US7190004B2Light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Mar 13, 2007·32 cites·162 claims
- 2881US7129525B2Semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Oct 31, 2006·7 cites·25 claims
- 2980US8014927B2Antilock brake system control device and methodKOMATSU MFG CO LTD·Filed 2006·Granted Sep 6, 2011·8 cites·2 claims
- 3079US7858502B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Dec 28, 2010·4 cites·6 claims
- 3179US7485484B2Group III-V crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 3, 2009·4 cites·6 claims
- 3277US6568763B2System for controlling operation of cylinder of vehicleKOMATSU MFG CO LTD·Filed 2001·Granted May 27, 2003·25 cites·4 claims
- 3376US8310030B2III-nitride crystal substrate and III-nitride semiconductor deviceHIROTA RYU·Filed 2011·Granted Nov 13, 2012·4 cites·10 claims
- 3476US7892513B2Group III nitride crystal and method of its growthSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 22, 2011·2 cites·14 claims
- 3576US7687822B2Light emitting apparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Mar 30, 2010·6 cites·2 claims
- 3675US9923063B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 20, 2018·3 cites·14 claims
- 3774US9917004B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 13, 2018·2 cites·9 claims
- 3874US8725360B2Traction control deviceUEMATSU KOJI·Filed 2009·Granted May 13, 2014·4 cites·9 claims
- 3974US8134223B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2009·Granted Mar 13, 2012·3 cites·4 claims
- 4072US8362521B2III nitride semiconductor crystal, III nitride semiconductor device, and light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 29, 2013·2 cites·13 claims
- 4172US8304334B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2012·Granted Nov 6, 2012·2 cites·5 claims
- 4272US7297625B2Group III-V crystal and manufacturing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Nov 20, 2007·10 cites·14 claims
- 4371US7723142B2Growth method of GaN crystal, and GaN crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted May 25, 2010·3 cites·6 claims
- 4467US11094537B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 17, 2021·0 cites·15 claims
- 4567US8538635B2Vehicle speed estimator and traction control deviceUEMATSU KOJI·Filed 2009·Granted Sep 17, 2013·5 cites·7 claims
- 4667US8504254B2Traction control apparatusUEMATSU KOJI·Filed 2009·Granted Aug 6, 2013·3 cites·8 claims
- 4767US8404569B2Fabrication method and fabrication apparatus of group III nitride crystal substanceKASAI HITOSHI·Filed 2010·Granted Mar 26, 2013·1 cites·8 claims
- 4867US8147612B2Method for manufacturing gallium nitride crystal and gallium nitride waferUEMURA TOMOKI·Filed 2007·Granted Apr 3, 2012·3 cites·40 claims
- 4966US9064706B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 23, 2015·1 cites·4 claims
- 5066US8697550B2Method of manufacturing GaN-based filmSATOH ISSEI·Filed 2011·Granted Apr 15, 2014·2 cites·7 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →