Inventor · disambiguated record
Phung T. Nguyen
Also filed as: NGUYEN PHUNG T
11 granted patents·2 pending applications·127 citations·filing 1992–2012
89Inventor score
Top patents by PatentIndex Score
13 records- 0193US8035126B2One-transistor static random access memory with integrated vertical PNPN deviceIBM·Filed 2007·Granted Oct 11, 2011·28 cites·4 claims
- 0286US8129234B2Method of forming bipolar transistor integrated with metal gate CMOS devicesWALLNER THOMAS A·Filed 2009·Granted Mar 6, 2012·14 cites·12 claims
- 0377US7803644B2Across reticle variation modeling and related reticleIBM·Filed 2007·Granted Sep 28, 2010·6 cites·4 claims
- 0474US6373221B2Charger couplingTOYODA AUTOMATIC LOOM WORKS·Filed 2000·Granted Apr 16, 2002·41 cites·10 claims
- 0564US5258640AGate controlled Schottky barrier diodeIBM·Filed 1992·Granted Nov 2, 1993·24 cites·16 claims
- 0663US6980009B2Structure for measurement of capacitance of ultra-thin dielectricsIBM·Filed 2003·Granted Dec 27, 2005·10 cites·25 claims
- 0746US8569840B2Bipolar transistor integrated with metal gate CMOS devicesWALLNER THOMAS A·Filed 2012·Granted Oct 29, 2013·0 cites·20 claims
- 0843US7781797B2One-transistor static random access memory with integrated vertical PNPN deviceIBM·Filed 2006·Granted Aug 24, 2010·0 cites·18 claims
- 0942US2007293016A1Semiconductor structure including isolation region with variable linewidth and method for fabrication therofIBM·Filed 2006·Application pending·0 cites
- 1041US6624486B2Method for low topography semiconductor device formationIBM·Filed 2001·Granted Sep 23, 2003·1 cites·10 claims
- 1139US6856031B1SRAM cell with well contacts and P+ diffusion crossing to ground or N+ diffusion crossing to VDDIBM·Filed 2004·Granted Feb 15, 2005·3 cites·40 claims
- 1236US6797569B2Method for low topography semiconductor device formationIBM·Filed 2003·Granted Sep 28, 2004·0 cites·10 claims
- 1336US2007069309A1Buried well for semiconductor devicesLINDSAY RICHARD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →