Inventor · disambiguated record
Semyon D. Savransky
Also filed as: SAVRANSKY SEMYON · SAVRANSKY SEMYON D
16 granted patents·11 pending applications·103 citations·filing 2006–2015
92Inventor score
Top patents by PatentIndex Score
27 records- 0192US8377741B2Self-heating phase change memory cell architectureST MICROELECTRONICS SRL·Filed 2008·Granted Feb 19, 2013·27 cites·35 claims
- 0289US8148707B2Ovonic threshold switch film composition for TSLAGS materialOVSHINSKY STANFORD·Filed 2009·Granted Apr 3, 2012·18 cites·24 claims
- 0389US7936593B2Reducing drift in chalcogenide devicesOVONYX INC·Filed 2008·Granted May 3, 2011·17 cites·21 claims
- 0486US7894237B2Programming multilevel cell phase change memoriesINTEL CORP·Filed 2008·Granted Feb 22, 2011·17 cites·14 claims
- 0580US7990761B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2008·Granted Aug 2, 2011·7 cites·76 claims
- 0679US7965545B2Reducing temporal changes in phase change memoriesINTEL CORP·Filed 2008·Granted Jun 21, 2011·8 cites·13 claims
- 0778US9036409B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted May 19, 2015·3 cites·10 claims
- 0870US8164949B2Reducing drift in chalcogenide devicesSAVRANSKY SEMYON D·Filed 2011·Granted Apr 24, 2012·2 cites·19 claims
- 0964US8228722B2Reducing temporal changes in phase change memoriesSAVRANSKY SEMYON D·Filed 2011·Granted Jul 24, 2012·2 cites·13 claims
- 1063US9570163B2Immunity of phase change material to disturb in the amorphous phaseOVONYX MEMORY TECH LLC·Filed 2015·Granted Feb 14, 2017·1 cites·11 claims
- 1156US8634226B2Immunity of phase change material to disturb in the amorphous phaseGORDON GEORGE·Filed 2011·Granted Jan 21, 2014·1 cites·5 claims
- 1253US9251895B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted Feb 2, 2016·0 cites·5 claims
- 1352US8861293B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2013·Granted Oct 14, 2014·0 cites·5 claims
- 1448US9536606B2Seasoning phase change memoriesOVONYX INC·Filed 2014·Granted Jan 3, 2017·0 cites·22 claims
- 1548US2010090189A1Nanoscale electrical deviceSAVRANSKY SEMYON D·Filed 2009·Application pending·0 cites
- 1645US8462546B2Reducing temporal changes in phase change memoriesSAVRANSKY SEMYON D·Filed 2012·Granted Jun 11, 2013·0 cites·2 claims
- 1745US2009072218A1Higher threshold voltage phase change memorySAVRANSKY SEMYON·Filed 2007·Application pending·0 cites
- 1842US2011079763A1Phase change devicesSAVRANSKY SEMYON D·Filed 2010·Application pending·0 cites
- 1941US2010283025A1Phase change devicesSAVRANSKY SEMYON D·Filed 2010·Application pending·0 cites
- 2040US2009257275A1Seasoning phase change memoriesKARPOV ILYA V·Filed 2008·Application pending·0 cites
- 2137US8076664B2Phase change memory with layered insulatorSAVRANSKY SEMYON D·Filed 2007·Granted Dec 13, 2011·0 cites·10 claims
- 2236US2010067290A1Method of programming of phase-change memory and associated devices and materialsSAVRANSKY SEMYON D·Filed 2009·Application pending·0 cites
- 2333US2008113464A1Asymmetric chalcogenide deviceSAVRANSKY SEMYON D·Filed 2006·Application pending·0 cites
- 2431US2011069540A1Method of a phase-change memory programmingSAVRANSKY SEMYON D·Filed 2010·Application pending·0 cites
- 2530US2010284213A1Method of cross-point memory programming and related devicesSAVRANSKY SEMYON D·Filed 2010·Application pending·0 cites
- 2630US2010226168A1Programming methods for phase-change memorySAVRANSKY SEMYON D·Filed 2010·Application pending·0 cites
- 2730US2010226163A1Method of resistive memory programming and associated devices and materialsSAVRANSKY SEMYON D·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →