Inventor · disambiguated record
Ho-Yuan Yu
Also filed as: YU HO Y · YU HO-YUAN
57 granted patents·3 pending applications·1,158 citations·filing 1977–2017
99Inventor score
Top patents by PatentIndex Score
60 records- 0197US7045397B1JFET and MESFET structures for low voltage high current and high frequency applicationsLOVOLTECH INC·Filed 2005·Granted May 16, 2006·51 cites·8 claims
- 0296US7417266B1MOSFET having a JFET embedded as a body diodeQSPEED SEMICONDUCTOR INC·Filed 2005·Granted Aug 26, 2008·43 cites·18 claims
- 0394US7211845B1Multiple doped channel in a multiple doped gate junction field effect transistorQSPEED SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·36 cites·19 claims
- 0491US6349047B1Full wave rectifier circuit using normally off JFETsLOVOLTECH INC·Filed 2000·Granted Feb 19, 2002·39 cites·14 claims
- 0589US8085106B2Method and apparatus for dynamic modulationHUDA MUZAHID BIN·Filed 2009·Granted Dec 27, 2011·54 cites·12 claims
- 0689US6307223B1Complementary junction field effect transistorsLOVOLTECH INC·Filed 1999·Granted Oct 23, 2001·80 cites·23 claims
- 0787US8097512B2MOSFET having a JFET embedded as a body diodeLI JIAN·Filed 2008·Granted Jan 17, 2012·12 cites·14 claims
- 0886US7655964B1Programmable junction field effect transistor and method for programming sameQSPEED SEMICONDUCTOR INC·Filed 2005·Granted Feb 2, 2010·11 cites·11 claims
- 0985US7220661B1Method of manufacturing a Schottky barrier rectifierQSPEED SEMICONDUCTOR INC·Filed 2004·Granted May 22, 2007·30 cites·22 claims
- 1085US6549439B1Full wave rectifier circuit using normally off JFETSLOVOLTECH INC·Filed 2001·Granted Apr 15, 2003·25 cites·22 claims
- 1184US7262461B1JFET and MESFET structures for low voltage, high current and high frequency applicationsQSPEED SEMICONDUCTOR INC·Filed 2006·Granted Aug 28, 2007·11 cites·9 claims
- 1284US7009228B1Guard ring structure and method for fabricating sameLOVOLTECH INC·Filed 2003·Granted Mar 7, 2006·33 cites·17 claims
- 1383US7038260B1Dual gate structure for a FET and method for fabricating sameLOVOLTECH INC·Filed 2003·Granted May 2, 2006·31 cites·14 claims
- 1483US6774417B1Electrostatic discharge protection device for integrated circuitsLOVOLTECH INC·Filed 2002·Granted Aug 10, 2004·26 cites·16 claims
- 1582US6355513B1Asymmetric depletion region for normally off JFETLOVOLTECH INC·Filed 2000·Granted Mar 12, 2002·30 cites·21 claims
- 1681US6921932B1JFET and MESFET structures for low voltage, high current and high frequency applicationsLOVOLTECH INC·Filed 2002·Granted Jul 26, 2005·24 cites·13 claims
- 1781US6356059B1Buck converter with normally off JFETLOVOLTECH INC·Filed 2001·Granted Mar 12, 2002·38 cites·23 claims
- 1880US6580252B1Boost circuit with normally off JFETLOVOLTECH INC·Filed 2001·Granted Jun 17, 2003·25 cites·19 claims
- 1980US6542001B1Power supply module in integrated circuitsLOVOLTECH INC·Filed 2001·Granted Apr 1, 2003·21 cites·20 claims
- 2080US6486011B1JFET structure and manufacture method for low on-resistance and low voltage applicationLOVOLTECH INC·Filed 2000·Granted Nov 26, 2002·22 cites·20 claims
- 2180US6251716B1JFET structure and manufacture method for low on-resistance and low voltage applicationLOVOLTECH INC·Filed 1999·Granted Jun 26, 2001·38 cites·5 claims
- 2279US7608888B1Field effect transistorQSPEED SEMICONDUCTOR INC·Filed 2005·Granted Oct 27, 2009·8 cites·17 claims
- 2378US6777722B1Method and structure for double dose gate in a JFETLOVOLTECH INC·Filed 2002·Granted Aug 17, 2004·20 cites·21 claims
- 2477US7880166B2Fast recovery reduced p-n junction rectifierYU HO-YUAN·Filed 2007·Granted Feb 1, 2011·6 cites·16 claims
- 2575US8916929B2MOSFET having a JFET embedded as a body diodeLI JIAN·Filed 2011·Granted Dec 23, 2014·3 cites·8 claims
- 2675US8669554B2Fast recovery reduced p-n junction rectifierYU HO-YUAN·Filed 2012·Granted Mar 11, 2014·4 cites·15 claims
- 2774US6995052B1Method and structure for double dose gate in a JFETLOVOLTECH INC·Filed 2004·Granted Feb 7, 2006·17 cites·14 claims
- 2873US7911033B2Bipolar transistor with depleted emitterYU HO-YUAN·Filed 2010·Granted Mar 22, 2011·3 cites·11 claims
- 2972US7227242B1Structure and method for enhanced performance in semiconductor substratesQSPEED SEMICONDUCTOR INC·Filed 2003·Granted Jun 5, 2007·21 cites·6 claims
- 3072US7009229B1Electrostatic discharge protection device for integrated circuitsLOVOLTECH INC·Filed 2004·Granted Mar 7, 2006·14 cites·18 claims
- 3171US7075132B1Programmable junction field effect transistor and method for programming the sameLOVOLTECH INC·Filed 2002·Granted Jul 11, 2006·13 cites·10 claims
- 3271US6734715B1Two terminal rectifier using normally off JFETLOVOLTECH INC·Filed 2003·Granted May 11, 2004·14 cites·12 claims
- 3370US7238976B1Schottky barrier rectifier and method of manufacturing the sameQSPEED SEMICONDUCTOR INC·Filed 2004·Granted Jul 3, 2007·12 cites·20 claims
- 3470US7098634B1Buck-boost circuit with normally off JFETLOVOLTECH INC·Filed 2003·Granted Aug 29, 2006·22 cites·24 claims
- 3570US6566936B1Two terminal rectifier normally OFF JFETLOVOLTECH INC·Filed 2000·Granted May 20, 2003·15 cites·14 claims
- 3669US6281705B1Power supply module in integrated circuitsLOVOLTECH INC·Filed 1999·Granted Aug 28, 2001·24 cites·18 claims
- 3768US7452763B1Method for a junction field effect transistor with reduced gate capacitanceQSPEED SEMICONDUCTOR INC·Filed 2004·Granted Nov 18, 2008·13 cites·20 claims
- 3868US6900506B1Method and structure for a high voltage junction field effect transistorLOVOLTECH INC·Filed 2002·Granted May 31, 2005·13 cites·20 claims
- 3968US6304007B1Switcher for switching capacitorsLOVOLTECH INC·Filed 1999·Granted Oct 16, 2001·35 cites·25 claims
- 4067US7268378B1Structure for reduced gate capacitance in a JFETQSPEED SEMICONDUCTOR INC·Filed 2002·Granted Sep 11, 2007·13 cites·21 claims
- 4166US10770599B2Deep trench MOS barrier junction all around rectifier and MOSFETYUTECHNIX INC·Filed 2017·Granted Sep 8, 2020·1 cites·10 claims
- 4265US7265398B1Method and structure for composite trench fillQSPEED SEMICONDUCTOR INC·Filed 2004·Granted Sep 4, 2007·10 cites·20 claims
- 4364US6887768B1Method and structure for composite trench fillLOVOLTECH INC·Filed 2003·Granted May 3, 2005·9 cites·15 claims
- 4464US6621722B1Rectifier circuits with low forward voltage JFET deviceLOVOLTECH INC·Filed 2000·Granted Sep 16, 2003·15 cites·11 claims
- 4564US6614289B1Starter device for normally off FETsLOVOLTECH INC·Filed 2000·Granted Sep 2, 2003·9 cites·20 claims
- 4663US6975157B1Starter device for normally off JFETsLOVOLTECH INC·Filed 2003·Granted Dec 13, 2005·8 cites·20 claims
- 4761US6184563B1Device structure for providing improved Schottky barrier rectifierFiled 1999·Granted Feb 6, 2001·25 cites·5 claims
- 4861US4194934AMethod of passivating a semiconductor device utilizing dual polycrystalline layersVARO SEMICONDUCTOR·Filed 1979·Granted Mar 25, 1980·21 cites·3 claims
- 4960US6750698B1Cascade circuits utilizing normally-off junction field effect transistors for low on-resistance and low voltage applicationsLOVOLTECH INC·Filed 2000·Granted Jun 15, 2004·9 cites·18 claims
- 5060US5444003AMethod and structure for creating a self-aligned bicmos-compatible bipolar transistor with a laterally graded emitter structureVLSI TECHNOLOGY INC·Filed 1993·Granted Aug 22, 1995·21 cites·26 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →