Inventor · disambiguated record
Nick Kepler
Also filed as: KEPLER NICK
31 granted patents·934 citations·filing 1996–2001
98Inventor score
Files withADVANCED MICRO DEVICES INC31
Top patents by PatentIndex Score
31 records- 0190US6037671AStepper alignment mark structure for maintaining alignment integrityADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 14, 2000·107 cites·21 claims
- 0285US5930645AShallow trench isolation formation with reduced polish stop thicknessADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·87 cites·17 claims
- 0384US6239031B1Stepper alignment mark structure for maintaining alignment integrityADVANCED MICRO DEVICES INC·Filed 2000·Granted May 29, 2001·39 cites·3 claims
- 0482US6171962B1Shallow trench isolation formation without planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 9, 2001·68 cites·11 claims
- 0579US6100145ASilicidation with silicon buffer layer and silicon spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 8, 2000·47 cites·16 claims
- 0676US6514844B1Sidewall treatment for low dielectric constant (low K) materials by ion implantationADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 4, 2003·21 cites·32 claims
- 0776US6255214B1Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regionsADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·38 cites·7 claims
- 0874US6150243AShallow junction formation by out-diffusion from a doped dielectric layer through a salicide layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·46 cites·19 claims
- 0971US6143624AShallow trench isolation formation with spacer-assisted ion implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 7, 2000·42 cites·24 claims
- 1070US6165903AMethod of forming ultra-shallow junctions in a semiconductor wafer with deposited silicon layer to reduce silicon consumption during salicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 26, 2000·29 cites·18 claims
- 1170US6030862ADual gate oxide formation with minimal channel dopant diffusionADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 29, 2000·30 cites·20 claims
- 1268US6074927AShallow trench isolation formation with trench wall spacerADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·37 cites·17 claims
- 1367US6274511B1Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·25 cites·16 claims
- 1466US6238986B1Formation of junctions by diffusion from a doped film at silicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted May 29, 2001·33 cites·22 claims
- 1564US6599810B1Shallow trench isolation formation with ion implantationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 29, 2003·29 cites·21 claims
- 1664US6156615AMethod for decreasing the contact resistance of silicide contacts by retrograde implantation of source/drain regionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 5, 2000·22 cites·6 claims
- 1764US6046104ALow pressure baked HSQ gap fill layer following barrier layer deposition for high integrity borderless viasADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 4, 2000·30 cites·33 claims
- 1862US6096599AFormation of junctions by diffusion from a doped film into and through a silicide during silicidationADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·27 cites·23 claims
- 1959US6380047B1Shallow trench isolation formation with two source/drain masks and simplified planarization maskADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·9 cites·17 claims
- 2059US6124183AShallow trench isolation formation with simplified reverse planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 26, 2000·25 cites·13 claims
- 2157US6162689AMulti-depth junction formation tailored to silicide formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 19, 2000·22 cites·19 claims
- 2257US6130467AShallow trench isolation with spacers for improved gate oxide qualityADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 10, 2000·23 cites·2 claims
- 2353US6204177B1Method of forming junction leakage free metal silicide in a semiconductor wafer by alloying refractory metalADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 20, 2001·13 cites·22 claims
- 2453US5970363AShallow trench isolation formation with improved trench edge oxideADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·19 cites·30 claims
- 2551US6380040B1Prevention of dopant out-diffusion during silicidation and junction formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·5 cites·20 claims
- 2651US5970362ASimplified shallow trench isolation formation with no polish stopADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·17 cites·14 claims
- 2750US6169005B1Formation of junctions by diffusion from a doped amorphous silicon film during silicidationADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 2, 2001·16 cites·22 claims
- 2849US5795820AMethod for simplifying the manufacture of an interlayer dielectric stackADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 18, 1998·15 cites·21 claims
- 2933US6090712AShallow trench isolation formation with no polish stopADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 18, 2000·6 cites·12 claims
- 3032US6162699AMethod for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its peripheryADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 19, 2000·2 cites·16 claims
- 3132US6090713AShallow trench isolation formation with simplified reverse planarization maskADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 18, 2000·5 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →