Inventor · disambiguated record
Shao-Ming Yu
Also filed as: YU SHAO-MING
90 granted patents·18 pending applications·695 citations·filing 2009–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD91TAIWAN SEMICONDUCTOR MFG4YU SHAO-MING3MOSAID TECH INCORPORATED2SHEN JENG-JUNG2
Top patents by PatentIndex Score
108 records- 0199US10475902B2Spacers for nanowire-based integrated circuit device and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·124 cites·20 claims
- 0299US10032627B2Method for forming stacked nanowire transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 24, 2018·147 cites·20 claims
- 0399US8039179B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 18, 2011·121 cites·20 claims
- 0498US11245071B2Memory cell, method of forming the same, and semiconductor device having the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·8 claims
- 0598US10510951B1Low temperature film for PCRAM sidewall protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·26 cites·20 claims
- 0698US7862962B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 4, 2011·46 cites·20 claims
- 0797US11818967B2Sidewall protection for PCRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0897US10374059B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·14 cites·20 claims
- 0997US10361278B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·18 cites·20 claims
- 1095US9324866B2Structure and method for transistor with line end extensionYU SHAO-MING·Filed 2012·Granted Apr 26, 2016·30 cites·15 claims
- 1194US11817488B2Method and related apparatus for integrating electronic memory in an integrated chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 1294US10636891B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·10 cites·20 claims
- 1394US10497624B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·10 cites·20 claims
- 1493US12199169B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 14, 2025·2 cites·20 claims
- 1593US10825915B2Spacers for nanowire-based integrated circuit device and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·6 cites·20 claims
- 1693US8241823B2Method of fabrication of a semiconductor device having reduced pitchSHIEH MING-FENG·Filed 2011·Granted Aug 14, 2012·11 cites·20 claims
- 1792US11037828B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·6 cites·20 claims
- 1892US8621398B2Automatic layout conversion for FinFET deviceSHEN JENG-JUNG·Filed 2010·Granted Dec 31, 2013·24 cites·20 claims
- 1991US10978422B2Vertical transistor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·2 cites·20 claims
- 2090US10991811B2Structure and formation method of semiconductor device structure with nanowiresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·4 cites·20 claims
- 2190US10770290B2Method for forming stacked nanowire transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·4 cites·19 claims
- 2289US12324362B2Phase-change memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 2388US8921136B2Self aligned contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 30, 2014·7 cites·20 claims
- 2488US2025311644A1Semiconductor devices with a double sided word line structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2587US12408565B2Phase-change memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 2687US12133476B2Phase change memory device having tapered portion of the bottom memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 2787US12102018B2Memory stacks and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 2887US11776852B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·1 cites·20 claims
- 2987US11038034B2Method and related apparatus for integrating electronic memory in an integrated chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·3 cites·20 claims
- 3087US8881084B2FinFET boundary optimizationSHEN JENG-JUNG·Filed 2010·Granted Nov 4, 2014·13 cites·20 claims
- 3186US12245526B2Sidewall protection for PCRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3286US10804375B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 13, 2020·3 cites·20 claims
- 3386US2025311375A1Gate stacks for stack-fin channel i/o devices and nanowire channel core devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3486US2025351748A1Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3586US2024381791A1Memory stacks and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3685US11387102B2Stacked nanowire transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 12, 2022·2 cites·18 claims
- 3785US11205706B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·3 cites·20 claims
- 3885US8813014B2Semiconductor device and method for making the same using semiconductor fin density design rulesYU SHAO-MING·Filed 2009·Granted Aug 19, 2014·12 cites·19 claims
- 3985US2025351750A1Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4084US12439836B2Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 4184US12349607B2Semiconductor devices with a double sided word line structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 4284US11362277B2Sidewall protection for PCRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 14, 2022·2 cites·20 claims
- 4384US2025268111A1Phase-Change Memory Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4483US12218239B2Structure and method for providing line end extensions for fin-type active regionsMOSAID TECH INCORPORATED·Filed 2023·Granted Feb 4, 2025·0 cites·16 claims
- 4583US8747992B2Non-uniform semiconductor device active area pattern formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 10, 2014·5 cites·20 claims
- 4682US11925127B2Phase-change memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 4782US9917192B2Structure and method for transistors with line end extensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·3 cites·19 claims
- 4881US11793092B2Memory stacks and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 4981US11411181B2Phase-change memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·1 cites·20 claims
- 5081US9673328B2Structure and method for providing line end extensions for fin-type active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·4 cites·17 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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