Inventor · disambiguated record
Hayashi Otsuki
Also filed as: OTSUKI HAYASHI
24 granted patents·6 pending applications·591 citations·filing 1993–2010
97Inventor score
Top patents by PatentIndex Score
30 records- 0197US6861356B2Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier filmTOKYO ELECTRON LTD·Filed 2002·Granted Mar 1, 2005·245 cites·32 claims
- 0296US7879179B2Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed filmTOKYO ELECTRON LTD·Filed 2007·Granted Feb 1, 2011·22 cites·12 claims
- 0393US7846291B2Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed filmTOKYO ELECTRON LTD·Filed 2003·Granted Dec 7, 2010·36 cites·19 claims
- 0491US7511814B2Particle-measuring system and particle-measuring methodTOKYO ELECTRON LTD·Filed 2007·Granted Mar 31, 2009·10 cites·29 claims
- 0589US7667840B2Particle-measuring system and particle-measuring methodTOKYO ELECTRON LTD·Filed 2007·Granted Feb 23, 2010·9 cites·36 claims
- 0689US6936102B1SiC material, semiconductor processing equipment and method of preparing SiC material thereforTOYO TANSO CO·Filed 2000·Granted Aug 30, 2005·33 cites·22 claims
- 0788US7931945B2Film forming methodTOKYO ELECTRON LTD·Filed 2007·Granted Apr 26, 2011·8 cites·10 claims
- 0885US7894059B2Film formation processing apparatus and method for determining an end-point of a cleaning processTOKYO ELECTRON LTD·Filed 2007·Granted Feb 22, 2011·6 cites·16 claims
- 0980US7829144B2Method of forming a metal film for electrodeTOKYO ELECTRON LTD·Filed 2005·Granted Nov 9, 2010·7 cites·21 claims
- 1080US6532069B1Particle-measuring system and particle-measuring methodTOKYO ELECTRON LTD·Filed 2000·Granted Mar 11, 2003·25 cites·9 claims
- 1178US7410923B2SiC material, semiconductor device fabricating system and SiC material forming methodTOKYO ELECTRON LTD·Filed 2005·Granted Aug 12, 2008·2 cites·17 claims
- 1276US8100147B2Particle-measuring system and particle-measuring methodOTSUKI HAYASHI·Filed 2007·Granted Jan 24, 2012·4 cites·13 claims
- 1376US7484513B2Method of forming titanium film by CVDTOKYO ELECTRON LTD·Filed 2005·Granted Feb 3, 2009·6 cites·10 claims
- 1475US5474641AProcessing method and apparatus thereofTOKYO ELECTRON LTD·Filed 1993·Granted Dec 12, 1995·57 cites·16 claims
- 1573US7515264B2Particle-measuring system and particle-measuring methodTOKYO ELECTRON LTD·Filed 2002·Granted Apr 7, 2009·9 cites·20 claims
- 1673US6824825B2Method for depositing metallic nitride series thin filmTOKYO ELECTRON LTD·Filed 2002·Granted Nov 30, 2004·12 cites·43 claims
- 1772US7828016B2Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatusTOKYO ELECTRON LTD·Filed 2008·Granted Nov 9, 2010·5 cites·10 claims
- 1868US7153773B2TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming systemTOKYO ELECTRON LTD·Filed 2004·Granted Dec 26, 2006·9 cites·15 claims
- 1964US6451388B1Method of forming titanium film by chemical vapor depositionTOKYO ELECTRON LTD·Filed 2000·Granted Sep 17, 2002·12 cites·18 claims
- 2063US6838376B2Method of forming semiconductor wiring structuresTOKYO ELECTRON LTD·Filed 1998·Granted Jan 4, 2005·27 cites·16 claims
- 2162US6817381B2Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatusTOKYO ELECTRON LTD·Filed 2003·Granted Nov 16, 2004·8 cites·11 claims
- 2261US6919273B1Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN filmTOKYO ELECTRON LTD·Filed 1999·Granted Jul 19, 2005·21 cites·9 claims
- 2355US6841203B2Method of forming titanium film by CVDTOKYO ELECTRON LTD·Filed 2002·Granted Jan 11, 2005·5 cites·14 claims
- 2449US6177149B1Method of forming titanium film by CVDTOKYO ELECTRON LTD·Filed 1998·Granted Jan 23, 2001·13 cites·15 claims
- 2548US2010139565A1Particle-measuring system and particle-measuring methodOTSUKI HAYASHI·Filed 2010·Application pending·0 cites
- 2647US2006231028A1Method for depositing metallic nitride series thin filmOTSUKI HAYASHI·Filed 2006·Application pending·0 cites
- 2746US2001003271A1Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed filmTOKYO ELECTRON LTD·Filed 2000·Application pending·0 cites
- 2845US2009071404A1Method of forming titanium film by CVDTADA KUNIHIRO·Filed 2008·Application pending·0 cites
- 2944US2005089634A1Method for depositing metallic nitride series thin filmFiled 2004·Application pending·0 cites
- 3042US2005061377A1Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatusFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →