Inventor · disambiguated record
Seon-Mee Cho
Also filed as: CHO SEON-MEE
34 granted patents·13 pending applications·2,637 citations·filing 1999–2017
98Inventor score
Files withAPPLIED MATERIALS INC20NOVELLUS SYSTEMS INC9INTERMOLECULAR INC3LG DISPLAY CO LTD3HANAWA HIROJI2
Top patents by PatentIndex Score
47 records- 0198US7589028B1Hydroxyl bond removal and film densification method for oxide films using microwave post treatmentNOVELLUS SYSTEMS INC·Filed 2005·Granted Sep 15, 2009·424 cites·25 claims
- 0298US7265061B1Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical propertiesNOVELLUS SYSTEMS INC·Filed 2004·Granted Sep 4, 2007·632 cites·38 claims
- 0398US7036453B2Apparatus for reducing plasma charge damage for plasma processesAPPLIED MATERIALS INC·Filed 2003·Granted May 2, 2006·467 cites·14 claims
- 0498US6660662B2Method of reducing plasma charge damage for plasma processesAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·478 cites·15 claims
- 0597US7622162B1UV treatment of STI films for increasing tensile stressNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 24, 2009·63 cites·21 claims
- 0696US8709924B2Method for conformal plasma immersed ion implantation assisted by atomic layer depositionHANAWA HIROJI·Filed 2011·Granted Apr 29, 2014·30 cites·7 claims
- 0796US7611757B1Method to improve mechanical strength of low-K dielectric film using modulated UV exposureNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 3, 2009·39 cites·20 claims
- 0896US7163899B1Localized energy pulse rapid thermal anneal dielectric film densification methodNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 16, 2007·38 cites·38 claims
- 0996US6486082B1CVD plasma assisted lower dielectric constant sicoh filmAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·80 cites·30 claims
- 1095US7253125B1Method to improve mechanical strength of low-k dielectric film using modulated UV exposureNOVELLUS SYSTEMS INC·Filed 2004·Granted Aug 7, 2007·82 cites·32 claims
- 1193US8043667B1Method to improve mechanical strength of low-K dielectric film using modulated UV exposureNOVELLUS SYSTEMS INC·Filed 2009·Granted Oct 25, 2011·18 cites·17 claims
- 1292US6713390B2Barrier layer deposition using HDP-CVDAPPLIED MATERIALS INC·Filed 2002·Granted Mar 30, 2004·62 cites·21 claims
- 1392US6399489B1Barrier layer deposition using HDP-CVDAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·110 cites·25 claims
- 1491US7892985B1Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curingNOVELLUS SYSTEMS INC·Filed 2005·Granted Feb 22, 2011·18 cites·19 claims
- 1590US8883269B2Thin film deposition using microwave plasmaWON TAE KYUNG·Filed 2011·Granted Nov 11, 2014·6 cites·5 claims
- 1687US8906813B2SiOx process chemistry development using microwave plasma CVDWON TAE KYUNG·Filed 2013·Granted Dec 9, 2014·8 cites·13 claims
- 1787US8715788B1Method to improve mechanical strength of low-K dielectric film using modulated UV exposureBANDYOPADHYAY ANANDA K·Filed 2011·Granted May 6, 2014·9 cites·18 claims
- 1887US7531469B2Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion currentAPPLIED MATERIALS INC·Filed 2007·Granted May 12, 2009·8 cites·16 claims
- 1981US7968439B2Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfacesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 28, 2011·6 cites·13 claims
- 2081US7491653B1Metal-free catalysts for pulsed deposition layer process for conformal silica laminatesNOVELLUS SYSTEMS INC·Filed 2005·Granted Feb 17, 2009·7 cites·28 claims
- 2179US6926926B2Silicon carbide deposited by high density plasma chemical-vapor deposition with biasAPPLIED MATERIALS INC·Filed 2001·Granted Aug 9, 2005·21 cites·18 claims
- 2276US9048518B2Transmission line RF applicator for plasma chamberKUDELA JOZEF·Filed 2012·Granted Jun 2, 2015·5 cites·20 claims
- 2375US9818580B2Transmission line RF applicator for plasma chamberAPPLIED MATERIALS INC·Filed 2015·Granted Nov 14, 2017·2 cites·19 claims
- 2475US9337030B2Method to grow in-situ crystalline IGZO using co-sputtering targetsINTERMOLECULAR INC·Filed 2014·Granted May 10, 2016·3 cites·17 claims
- 2575US7153787B2CVD plasma assisted lower dielectric constant SICOH filmAPPLIED MATERIALS INC·Filed 2005·Granted Dec 26, 2006·3 cites·20 claims
- 2674US7871828B2In-situ dose monitoring using optical emission spectroscopyAPPLIED MATERIALS INC·Filed 2008·Granted Jan 18, 2011·4 cites·8 claims
- 2773US7691755B2Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactorAPPLIED MATERIALS INC·Filed 2007·Granted Apr 6, 2010·4 cites·16 claims
- 2869US9287137B2Methods for depositing a silicon containing layer with argon gas dilutionWANG QUNHUA·Filed 2012·Granted Mar 15, 2016·2 cites·16 claims
- 2967US2009195777A1Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion currentAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 3066US9202690B2Methods for forming crystalline IGZO through annealingINTERMOLECULAR INC·Filed 2013·Granted Dec 1, 2015·2 cites·14 claims
- 3164US6943127B2CVD plasma assisted lower dielectric constant SICOH filmAPPLIED MATERIALS INC·Filed 2002·Granted Sep 13, 2005·6 cites·22 claims
- 3263US2013068161A1Gas delivery and distribution for uniform process in linear-type large-area plasma reactorWHITE JOHN M·Filed 2012·Application pending·0 cites
- 3361US2016208380A1Gas delivery and distribution for uniform process in linear-type large-area plasma reactorAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
- 3457US9590113B2Multilayer passivation or etch stop TFTAPPLIED MATERIALS INC·Filed 2014·Granted Mar 7, 2017·0 cites·8 claims
- 3555US9935183B2Multilayer passivation or etch stop TFTAPPLIED MATERIALS INC·Filed 2017·Granted Apr 3, 2018·0 cites·15 claims
- 3653US9245809B2Pin hole evaluation method of dielectric films for metal oxide semiconductor TFTAPPLIED MATERIALS INC·Filed 2014·Granted Jan 26, 2016·0 cites·13 claims
- 3753US2009203197A1Novel method for conformal plasma immersed ion implantation assisted by atomic layer depositionHANAWA HIROJI·Filed 2008·Application pending·0 cites
- 3852US2012279943A1Processing chamber with cooled gas delivery lineNOMINANDA HELINDA·Filed 2012·Application pending·0 cites
- 3947US2008153306A1Dry photoresist stripping process and apparatusAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 4047US2008149135A1Wet photoresist stripping process and apparatusCHO SEON-MEE·Filed 2007·Application pending·0 cites
- 4146US8168519B2Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfacesLI SHIJIAN·Filed 2011·Granted May 1, 2012·0 cites·13 claims
- 4245US2015279674A1CAAC IGZO Deposited at Room TemperatureINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 4340US2012326592A1Transmission Line RF Applicator for Plasma ChamberKUDELA JOZEF·Filed 2011·Application pending·0 cites
- 4439US2015187574A1IGZO with Intra-Layer Variations and Methods for Forming the SameLG DISPLAY CO LTD·Filed 2013·Application pending·0 cites
- 4538US2015179444A1Methods for Forming Crystalline IGZO Through Power Supply Mode OptimizationLG DISPLAY CO LTD·Filed 2013·Application pending·0 cites
- 4638US2004161536A1Method for depositing a low-k material having a controlled thickness rangeAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 4737US2015179446A1Methods for Forming Crystalline IGZO Through Processing Condition OptimizationLG DISPLAY CO LTD·Filed 2013·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →