Inventor · disambiguated record
Kechuang Lin
Also filed as: LIN KECHUANG
16 granted patents·12 pending applications·28 citations·filing 2011–2025
88Inventor score
Files withXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD6LIN KECHUANG5XIAMEN SANAN OPTOELECTRONICS CO LTD4PAN QUNFENG3XIAMEN SANAN INTEGRATED CIRCUIT CO LTD3
Top patents by PatentIndex Score
28 records- 0193US10643879B2Transfer head for transferring micro element and transferring method of micro elementXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2018·Granted May 5, 2020·10 cites·19 claims
- 0276US8860044B2Nitride light-emitting diode with a current spreading layerYEH MENG-HSIN·Filed 2012·Granted Oct 14, 2014·6 cites·20 claims
- 0375US9006768B2Light emitting diode having increased light extractionPAN QUNFENG·Filed 2012·Granted Apr 14, 2015·4 cites·19 claims
- 0474US8399906B2AlGaInP-based light-emitting diode with double reflective layers and fabrication method thereofTSAI CHIAHAO·Filed 2011·Granted Mar 19, 2013·4 cites·18 claims
- 0573US8415702B2Reflector, manufacture method thereof and light-emitting device including the reflectorPAN QUNFENG·Filed 2011·Granted Apr 9, 2013·2 cites·4 claims
- 0673US2025324824A1Micro light-emitting diode and display apparatus having sameXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0770US8581268B2Light emitting diode with a current concentrating structurePAN QUNFENG·Filed 2012·Granted Nov 12, 2013·2 cites·17 claims
- 0862US11631601B2Transfer head for transferring micro element and transferring method of micro elementXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2020·Granted Apr 18, 2023·0 cites·14 claims
- 0962US2024087877A1Backside metallized compound semiconductor device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 1060US2024339487A1Display deviceXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1159US10279562B2High-buoyancy material and systemLIN KECHUANG·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 1256US2025133873A1Light-emitting device and light-emitting apparatusXIAMEN SAN’AN OPTOELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1356US2023361056A1Semiconductor device and method of making the same and seal ring structureHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 1455US8823046B2Light emitting diode with a current concentrating structureXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2013·Granted Sep 2, 2014·0 cites·20 claims
- 1554US2025331335A1Micro light-emitting diode and display apparatus having sameXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1653US10644324B2Electrode material and energy storage apparatusLIN KECHUANG·Filed 2017·Granted May 5, 2020·0 cites·18 claims
- 1752US11823891B2Backside metallized compound semiconductor device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Nov 21, 2023·0 cites·17 claims
- 1852US10916458B2Transfer head for transferring micro element and transferring method of micro elementXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2017·Granted Feb 9, 2021·0 cites·16 claims
- 1951US10186495B2Film for semiconductor device and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2018·Granted Jan 22, 2019·0 cites·19 claims
- 2050US10790418B2Light emitting diode fabrication methodXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2014·Granted Sep 29, 2020·0 cites·9 claims
- 2150US9312438B2Nitride light emitting diode and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2015·Granted Apr 12, 2016·0 cites·12 claims
- 2249US2024204140A1Micro light-emitting diode and display device using the sameXIAMEN SAN’AN OPTOELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2348US10561993B2Bubble-generation apparatus and systemLIN KECHUANG·Filed 2017·Granted Feb 18, 2020·0 cites·16 claims
- 2447US2024128337A1Semiconductor transistor and manufacturing method thereforXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 2541US2017218532A1Porous materials and systems and methods of fabricating thereofLIN KECHUANG·Filed 2017·Application pending·0 cites
- 2640US2011297914A1Gallium nitride-based flip-chip light-emitting diode with double reflective layers on its side and fabrication method thereofZHENG JIANSEN·Filed 2011·Application pending·0 cites
- 2738US2017259254A1Photocatalyst apparatus and systemLIN KECHUANG·Filed 2017·Application pending·0 cites
- 2836US2011278619A1Quaternary vertical light emitting diode with double surface roughening and manufacturing method thereofLIN XIAOXIONG·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →