Inventor · disambiguated record
Jiun-Lei Jerry Yu
Also filed as: YU JIUN-LEI · YU JIUN-LEI JERRY
96 granted patents·11 pending applications·204 citations·filing 2010–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD80TAIWAN SEMICONDUCTOR MFG9WONG KING-YUEN4THEI KONG-BENG3Yao fu-wei3
Top patents by PatentIndex Score
107 records- 0197US11404557B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0297US9379191B2High electron mobility transistor including an isolation regionHSU CHUN-WEI·Filed 2011·Granted Jun 28, 2016·27 cites·20 claims
- 0396US11824109B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0496US9722065B1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·13 cites·20 claims
- 0594US12278272B2Source leakage current suppression by source surrounding gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·2 cites·20 claims
- 0694US11521915B2Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·3 cites·20 claims
- 0794US10050117B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·20 claims
- 0893US9111905B2High electron mobility transistor and method of forming the sameYao fu-wei·Filed 2012·Granted Aug 18, 2015·12 cites·20 claims
- 0993US8624296B1High electron mobility transistor including an embedded flourine regionWONG KING-YUEN·Filed 2012·Granted Jan 7, 2014·18 cites·18 claims
- 1092US8389348B2Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronicsTHEI KONG-BENG·Filed 2010·Granted Mar 5, 2013·13 cites·19 claims
- 1191US10269949B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 1291US9443969B2Transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·10 cites·20 claims
- 1390US10790375B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·3 cites·20 claims
- 1490US9812562B1Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims
- 1590US8507920B2Semiconductor structure and method of forming the sameCHEN PO-CHIH·Filed 2011·Granted Aug 13, 2013·12 cites·20 claims
- 1689US8680535B2High electron mobility transistor structure with improved breakdown voltage performanceYao fu-wei·Filed 2012·Granted Mar 25, 2014·7 cites·20 claims
- 1788US9704968B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·3 cites·17 claims
- 1888US9165839B2Plasma protection diode for a HEMT deviceWONG KING-YUEN·Filed 2012·Granted Oct 20, 2015·6 cites·20 claims
- 1987US12230690B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2087US10741665B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 2187US9508807B2Method of forming high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·3 cites·20 claims
- 2286US9711463B2Dicing method for power transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·20 claims
- 2386US9147743B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·4 cites·20 claims
- 2485US11522077B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 2585US10727329B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
- 2685US8697505B2Method of forming a semiconductor structureCHEN PO-CHIH·Filed 2011·Granted Apr 15, 2014·6 cites·20 claims
- 2784US11631741B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·1 cites·19 claims
- 2883US12107156B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 2982US12087820B2Semiconductor device having a plurality of III-V semiconductor layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 3082US8963162B2High electron mobility transistorHSU CHUN-WEI·Filed 2011·Granted Feb 24, 2015·5 cites·20 claims
- 3181US12272741B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3281US2025240996A1Integration of p-channel and n-channel e-fet iii-v devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3380US2023299133A1Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3479US11804538B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 3579US8946771B2Gallium nitride semiconductor devices and method making thereofHSIUNG CHIH-WEN·Filed 2011·Granted Feb 3, 2015·7 cites·17 claims
- 3679US8841703B2High electron mobility transistor and method of forming the sameWONG KING-YUEN·Filed 2011·Granted Sep 23, 2014·4 cites·20 claims
- 3778US2024387719A1Barrier structure configured to increase performance of iii-v devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3878US2025267917A1Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3977US2025349701A1Wafer-on-wafer cascode hemt deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4076US12324211B2Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 4176US12094838B2Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 4276US11532740B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 4376US2025323218A13d semiconductor structure for wide-bandgap semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4475US2024355761A1Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4575US2024355711A1Front-end-of-line (feol) through semiconductor-on-substrate via (tsv)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4674US10276657B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·20 claims
- 4773US12419074B2Barrier structure configured to increase performance of III-V devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 4873US11705486B2Isolation structure for active devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 18, 2023·0 cites·20 claims
- 4973US10083921B2Power transistor dieTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·1 cites·20 claims
- 5073US10068976B2Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·2 cites·20 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →