Inventor · disambiguated record
Chen-Ju Yu
Also filed as: YU CHEN-JU
50 granted patents·133 citations·filing 2011–2023
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30TAIWAN SEMICONDUCTOR MFG8WONG KING-YUEN4Yao fu-wei3HSU CHUN-WEI2
Top patents by PatentIndex Score
50 records- 0197US11404557B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0297US9379191B2High electron mobility transistor including an isolation regionHSU CHUN-WEI·Filed 2011·Granted Jun 28, 2016·27 cites·20 claims
- 0394US10050117B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·20 claims
- 0493US9111905B2High electron mobility transistor and method of forming the sameYao fu-wei·Filed 2012·Granted Aug 18, 2015·12 cites·20 claims
- 0593US8624296B1High electron mobility transistor including an embedded flourine regionWONG KING-YUEN·Filed 2012·Granted Jan 7, 2014·18 cites·18 claims
- 0691US9443969B2Transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·10 cites·20 claims
- 0790US10790375B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·3 cites·20 claims
- 0889US8680535B2High electron mobility transistor structure with improved breakdown voltage performanceYao fu-wei·Filed 2012·Granted Mar 25, 2014·7 cites·20 claims
- 0988US9704968B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·3 cites·17 claims
- 1088US9165839B2Plasma protection diode for a HEMT deviceWONG KING-YUEN·Filed 2012·Granted Oct 20, 2015·6 cites·20 claims
- 1187US12230690B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1287US10741665B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 1387US9508807B2Method of forming high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·3 cites·20 claims
- 1486US9147743B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·4 cites·20 claims
- 1582US8963162B2High electron mobility transistorHSU CHUN-WEI·Filed 2011·Granted Feb 24, 2015·5 cites·20 claims
- 1679US11804538B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 1779US8946771B2Gallium nitride semiconductor devices and method making thereofHSIUNG CHIH-WEN·Filed 2011·Granted Feb 3, 2015·7 cites·17 claims
- 1879US8841703B2High electron mobility transistor and method of forming the sameWONG KING-YUEN·Filed 2011·Granted Sep 23, 2014·4 cites·20 claims
- 1973US9419093B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·2 cites·20 claims
- 2073US9184259B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 2172US8921893B2Circuit structure having islands between source and drainYU CHEN-JU·Filed 2011·Granted Dec 30, 2014·2 cites·19 claims
- 2271US9583588B2Method of making high electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·1 cites·20 claims
- 2370US9553182B2Circuit structure, transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·1 cites·20 claims
- 2468US9111956B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·1 cites·20 claims
- 2567US9224829B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·1 cites·20 claims
- 2666US10522630B2High electron mobility transistor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 2764US10868135B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2864US10276682B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·20 claims
- 2964US8884334B2Composite layer stacking for enhancement mode transistorTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 11, 2014·1 cites·21 claims
- 3062US10283599B2High electron mobility transistor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 3162US9018677B2Semiconductor structure and method of forming the sameYao fu-wei·Filed 2011·Granted Apr 28, 2015·1 cites·20 claims
- 3261US8860088B2Semiconductor structure and method of forming the sameYU CHEN-JU·Filed 2012·Granted Oct 14, 2014·1 cites·20 claims
- 3360US10164047B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 3460US9985103B2Method of forming high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·0 cites·20 claims
- 3560US9385225B2Method of making a circuit structure having islands between source and drainTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 5, 2016·0 cites·20 claims
- 3658US9871030B2Plasma protection diode for a HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·0 cites·20 claims
- 3758US9728613B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·0 cites·20 claims
- 3857US10096690B2Circuit structure, transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·0 cites·20 claims
- 3957US10020361B2Circuit structure having islands between source and drain and circuit formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 10, 2018·0 cites·20 claims
- 4057US9793371B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 4157US9755045B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 4257US8884308B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 11, 2014·0 cites·20 claims
- 4356US10115813B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 30, 2018·0 cites·19 claims
- 4456US9748372B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·0 cites·20 claims
- 4556US9502311B2Plasma protection diode for a HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·20 claims
- 4656US9425300B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·0 cites·20 claims
- 4756US9111904B2Substrate breakdown voltage improvement for group III-nitride on a silicon substrateTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 18, 2015·0 cites·21 claims
- 4855US9412835B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·0 cites·20 claims
- 4954US10868134B2Method of making transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 15, 2020·0 cites·20 claims
- 5053US8748942B2High electron mobility transistor and method of forming the sameWONG KING-YUEN·Filed 2012·Granted Jun 10, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →