Inventor · disambiguated record
Sheng-Chin Kung
Also filed as: KUNG SHENG-CHIN
9 granted patents·2 pending applications·17 citations·filing 2002–2022
81Inventor score
Top patents by PatentIndex Score
11 records- 0190US10777650B2Horizontal gate all around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2017·Granted Sep 15, 2020·5 cites·20 claims
- 0289US10861722B2Integrated semiconductor processingAPPLIED MATERIALS INC·Filed 2019·Granted Dec 8, 2020·6 cites·20 claims
- 0387US9966438B2Method of doped germanium formationAPPLIED MATERIALS INC·Filed 2017·Granted May 8, 2018·5 cites·19 claims
- 0474US11848369B2Horizontal gate-all-around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 0570US11282936B2Horizontal gate all around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
- 0669US11011635B2Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) deviceAPPLIED MATERIALS INC·Filed 2017·Granted May 18, 2021·1 cites·22 claims
- 0762US11456178B2Gate interface engineering with doped layerAPPLIED MATERIALS INC·Filed 2021·Granted Sep 27, 2022·0 cites·20 claims
- 0856US11271097B2Cap oxidation for FinFET formationAPPLIED MATERIALS INC·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 0946US10249479B2Magnet configurations for radial uniformity tuning of ICP plasmasAPPLIED MATERIALS INC·Filed 2015·Granted Apr 2, 2019·0 cites·17 claims
- 1044US2020144397A1Methods and apparatus for silicon-germanium pre-cleanAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 1134US2004109813A1Process and device for upgrading current emissionUNIV TSINGHUA·Filed 2002·Application pending·0 cites
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