Inventor · disambiguated record
Jonathan D. Chapple-Sokol
Also filed as: CHAPPLE-SOKOL JONATHAN · CHAPPLE-SOKOL JONATHAN D · CHAPPLE-SOKOL JONATHAN DANIEL
28 granted patents·2 pending applications·2,275 citations·filing 1991–2014
97Inventor score
Top patents by PatentIndex Score
30 records- 0198US5431734AAluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical controlIBM·Filed 1994·Granted Jul 11, 1995·431 cites·4 claims
- 0297US5665608AMethod of aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical controlIBM·Filed 1995·Granted Sep 9, 1997·478 cites·4 claims
- 0397US5293050ASemiconductor quantum dot light emitting/detecting devicesIBM·Filed 1993·Granted Mar 8, 1994·333 cites·5 claims
- 0496US5505816AEtching of silicon dioxide selectively to silicon nitride and polysiliconIBM·Filed 1993·Granted Apr 9, 1996·328 cites·15 claims
- 0596US5354707AMethod of making semiconductor quantum dot light emitting/detecting devicesIBM·Filed 1993·Granted Oct 11, 1994·280 cites·12 claims
- 0690US6498096B2Borderless contact to diffusion with respect to gate conductor and methods for fabricatingIBM·Filed 2001·Granted Dec 24, 2002·62 cites·11 claims
- 0788US5383088AStorage capacitor with a conducting oxide electrode for metal-oxide dielectricsIBM·Filed 1993·Granted Jan 17, 1995·72 cites·4 claims
- 0879US6426558B1Metallurgy for semiconductor devicesIBM·Filed 2001·Granted Jul 30, 2002·28 cites·8 claims
- 0978US5612255AOne dimensional silicon quantum wire devices and the method of manufacture thereofIBM·Filed 1995·Granted Mar 18, 1997·63 cites·13 claims
- 1077US5465859ADual phase and hybrid phase shifting mask fabrication using a surface etch monitoring techniqueIBM·Filed 1994·Granted Nov 14, 1995·30 cites·10 claims
- 1169US7649262B2Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processingIBM·Filed 2009·Granted Jan 19, 2010·2 cites·6 claims
- 1269US5648113AAluminum oxide LPCVD systemIBM·Filed 1994·Granted Jul 15, 1997·25 cites·12 claims
- 1369US5268069ASafe method for etching silicon dioxideIBM·Filed 1992·Granted Dec 7, 1993·44 cites·17 claims
- 1468US8003536B2Electromigration resistant aluminum-based metal interconnect structureIBM·Filed 2009·Granted Aug 23, 2011·2 cites·7 claims
- 1564US9685370B2Titanium tungsten liner used with copper interconnectsIBM·Filed 2014·Granted Jun 20, 2017·1 cites·19 claims
- 1662US7879716B2Metal seed layer depositionIBM·Filed 2007·Granted Feb 1, 2011·2 cites·18 claims
- 1759US8084864B2Electromigration resistant aluminum-based metal interconnect structureCHAPPLE-SOKOL JONATHAN D·Filed 2011·Granted Dec 27, 2011·1 cites·13 claims
- 1857US6762121B2Method of forming refractory metal contact in an opening, and resulting structureIBM·Filed 2001·Granted Jul 13, 2004·2 cites·16 claims
- 1956US5540777AAluminum oxide LPCVD systemIBM·Filed 1995·Granted Jul 30, 1996·17 cites·7 claims
- 2055US6215190B1Borderless contact to diffusion with respect to gate conductor and methods for fabricatingIBM·Filed 1998·Granted Apr 10, 2001·18 cites·7 claims
- 2154US5134963ALPCVD reactor for high efficiency, high uniformity depositionIBM·Filed 1991·Granted Aug 4, 1992·15 cites·9 claims
- 2251US7235487B2Metal seed layer depositionIBM·Filed 2004·Granted Jun 26, 2007·4 cites·9 claims
- 2351US5534066AFluid delivery apparatus having an infrared feedline sensorIBM·Filed 1993·Granted Jul 9, 1996·14 cites·15 claims
- 2449US9196519B2Achieving uniform capacitance between an electrostatic chuck and a semiconductor waferIBM·Filed 2013·Granted Nov 24, 2015·0 cites·20 claims
- 2549US5492718AFluid delivery apparatus and method having an infrared feedline sensorIBM·Filed 1994·Granted Feb 20, 1996·11 cites·16 claims
- 2645US7572650B2Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processingINTERNAT BUSINESS MACHNINES CO·Filed 2006·Granted Aug 11, 2009·0 cites·8 claims
- 2745US5603988AMethod for depositing a titanium or tantalum nitride or nitride silicideMORTON INT INC·Filed 1995·Granted Feb 18, 1997·12 cites·22 claims
- 2845US2009230555A1Tungsten liner for aluminum-based electromigration resistant interconnect structureIBM·Filed 2008·Application pending·0 cites
- 2942US7173338B2Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processingIBM·Filed 2004·Granted Feb 6, 2007·0 cites·10 claims
- 3034US2002145201A1Method and apparatus for making air gap insulation for semiconductor devicesFiled 2001·Application pending·0 cites
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