Inventor · disambiguated record
Shigehiro Nishino
Also filed as: NISHINO SHIGEHIRO
7 granted patents·156 citations·filing 1998–2005
85Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES3KYOTO INST OF TECHNOLOGY1MITSUI ENGINEERING CO LTD1MITSUI SHIPBUILDING ENG1SHOWA DENKO KK1
Top patents by PatentIndex Score
7 records- 0185US6336971B1Method and apparatus for producing silicon carbide single crystalSHOWA DENKO KK·Filed 1998·Granted Jan 8, 2002·55 cites·15 claims
- 0285US6136093AMethod of making GaN single crystal and apparatus for making GaN single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Oct 24, 2000·51 cites·10 claims
- 0378US6391109B2Method of making SiC single crystal and apparatus for making SiC single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted May 21, 2002·13 cites·13 claims
- 0474US6193797B1Method of making SiC single crystal and apparatus for making SiC single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Feb 27, 2001·30 cites·9 claims
- 0562US6995036B2Production method of α-SiC waferMITSUI SHIPBUILDING ENG·Filed 2002·Granted Feb 7, 2006·7 cites·6 claims
- 0638US7671546B2Voltage division resistor for acceleration tubes, acceleration tube, and acceleratorKYOTO INST OF TECHNOLOGY·Filed 2005·Granted Mar 2, 2010·0 cites·19 claims
- 0729US7544249B2Large-diameter SiC wafer and manufacturing method thereofMITSUI ENGINEERING CO LTD·Filed 2003·Granted Jun 9, 2009·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →