Inventor · disambiguated record
Heinz Mitlehner
Also filed as: MITLEHNER HEINZ
42 granted patents·3 pending applications·1,130 citations·filing 1983–2011
98Inventor score
Files withSIEMENS AG29SICED ELECT DEV GMBH & CO KG8ELLISON ALEXANDRE2INFINEON TECHNOLOGIES AG2INFINEON TECHNOLOGIES AUSTRIA1
Top patents by PatentIndex Score
45 records- 0195US7615802B2Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 10, 2009·125 cites·20 claims
- 0295US6614281B1Method and device for disconnecting a cascode circuit with voltage-controlled semiconductor switchesSIEMENS AG·Filed 2000·Granted Sep 2, 2003·69 cites·10 claims
- 0393US6633195B2Hybrid power MOSFETSIEMENS AG·Filed 2001·Granted Oct 14, 2003·92 cites·16 claims
- 0491US6822842B2Switching device for switching at a high operating voltageSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 23, 2004·43 cites·20 claims
- 0589US6373318B1Electronic switching device having at least two semiconductor componentsSIEMENS AG·Filed 2001·Granted Apr 16, 2002·62 cites·23 claims
- 0688US5712502ASemiconductor component having an edge termination means with high field blocking capabilitySIEMENS AG·Filed 1995·Granted Jan 27, 1998·86 cites·28 claims
- 0787US6388271B1Semiconductor componentSIEMENS AG·Filed 2000·Granted May 14, 2002·47 cites·4 claims
- 0886US6157049AElectronic device, in particular for switching electric currents, for high reverse voltages and with low on-state lossesSIEMENS AG·Filed 1998·Granted Dec 5, 2000·72 cites·8 claims
- 0984US7206178B2Electronic switching deviceSIEMENS AG·Filed 2001·Granted Apr 17, 2007·29 cites·53 claims
- 1081US6034385ACurrent-limiting semiconductor configurationSIEMENS AG·Filed 1998·Granted Mar 7, 2000·54 cites·10 claims
- 1178US6535050B2Hybrid power MOSFET for high current-carrying capacitySIEMENS AG·Filed 2001·Granted Mar 18, 2003·23 cites·7 claims
- 1277US7763506B2Method for making an integrated circuit including vertical junction field effect transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jul 27, 2010·7 cites·14 claims
- 1377US7082020B2Electronic switching device and an operating method thereofSIEMENS AG·Filed 2002·Granted Jul 25, 2006·24 cites·55 claims
- 1477US6847091B2Vertical semiconductor component having a reduced electrical surface fieldINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 25, 2005·23 cites·7 claims
- 1576US6434019B2Method for reducing losses during the commutation processSIEMENS AG·Filed 2001·Granted Aug 13, 2002·30 cites·2 claims
- 1676US6046516AElectronic switch for use with inductive loadsSIEMENS AG·Filed 1994·Granted Apr 4, 2000·27 cites·8 claims
- 1773US6693322B2Semiconductor construction with buried island region and contact regionSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Feb 17, 2004·19 cites·18 claims
- 1870US6365919B1Silicon carbide junction field effect transistorINFINEON TECHNOLOGIES AG·Filed 1999·Granted Apr 2, 2002·29 cites·4 claims
- 1970US5808327AAC controllerSIEMENS AG·Filed 1993·Granted Sep 15, 1998·22 cites·4 claims
- 2068US6455911B1Silicon-based semiconductor component with high-efficiency barrier junction terminationSIEMENS AG·Filed 1996·Granted Sep 24, 2002·27 cites·36 claims
- 2167US6693314B2Junction field-effect transistor with more highly doped connecting regionSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Feb 17, 2004·13 cites·15 claims
- 2266US6459108B1Semiconductor configuration and current limiting deviceSIEMENS AG·Filed 1999·Granted Oct 1, 2002·25 cites·17 claims
- 2364US8803160B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2011·Granted Aug 12, 2014·0 cites·16 claims
- 2464US4680601ASchottky power diodeSIEMENS AG·Filed 1986·Granted Jul 14, 1987·21 cites·6 claims
- 2560US7482068B2Lightly doped silicon carbide wafer and use thereof in high power devicesNORSTEL AB·Filed 2003·Granted Jan 27, 2009·3 cites·12 claims
- 2660US6275393B1Nonlinear current limiting precharging circuit for a capacitor connected to an output of a line-commutated power converterSIEMENS AG·Filed 1998·Granted Aug 14, 2001·25 cites·11 claims
- 2757US6178077B1Electronic branch switching deviceSIEMENS AG·Filed 1997·Granted Jan 23, 2001·16 cites·3 claims
- 2856US6232625B1Semiconductor configuration and use thereofSICED ELECT DEV GMBH & CO KG·Filed 1999·Granted May 15, 2001·16 cites·22 claims
- 2954US6653666B2J-FET semiconductor configurationSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Nov 25, 2003·7 cites·15 claims
- 3054US6188555B1Device for limiting alternating electric currents, in particular in the event of a short circuitSICED ELECT DEV GMBH & CO KG·Filed 1999·Granted Feb 13, 2001·15 cites·51 claims
- 3152US6665591B1Protection device for low voltage networksSIEMENS AG·Filed 1999·Granted Dec 16, 2003·11 cites·13 claims
- 3251US5204273AMethod for the manufacturing of a thyristor with defined lateral resistorSIEMENS AG·Filed 1991·Granted Apr 20, 1993·14 cites·7 claims
- 3348US7071503B2Semiconductor structure with a switch element and an edge elementSICED ELECT DEV GMBH & CO KG·Filed 2004·Granted Jul 4, 2006·4 cites·19 claims
- 3448US4618871ASchottky power diodeSIEMENS AG·Filed 1983·Granted Oct 21, 1986·9 cites·8 claims
- 3543US5049965AThyristor having adjustable breakover voltage and method of manufactureSIEMENS AG·Filed 1988·Granted Sep 17, 1991·8 cites·4 claims
- 3641US5284780AMethod for increasing the electric strength of a multi-layer semiconductor componentSIEMENS AG·Filed 1992·Granted Feb 8, 1994·12 cites·5 claims
- 3738US6215632B1Switching deviceSIEMENS AG·Filed 1997·Granted Apr 10, 2001·6 cites·7 claims
- 3836US8097524B2Lightly doped silicon carbide wafer and use thereof in high power devicesELLISON ALEXANDRE·Filed 2009·Granted Jan 17, 2012·0 cites·9 claims
- 3936US2002070412A1Integrated semiconductor device having a lateral power elementFiled 2001·Application pending·0 cites
- 4034US5420045AProcess for manufacturing thyristor with adjustable breakover voltageSIEMENS AG·Filed 1993·Granted May 30, 1995·6 cites·4 claims
- 4134US2002109200A1Semiconductor product with a Schottky contactFiled 2002·Application pending·0 cites
- 4232US2001054848A1Method and apparatus for balancing the power losses in a number of parallel-connected cascode circuitsSIEMENS AG·Filed 2001·Application pending·0 cites
- 4331US4757366ALight-triggerable thyristor having low-loss feed of the trigger energySIEMENS AG·Filed 1986·Granted Jul 12, 1988·3 cites·19 claims
- 4431US4728371AMethod for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiationSIEMENS AG·Filed 1986·Granted Mar 1, 1988·4 cites·15 claims
- 4528US5880506ASolid-state switching element with two source electrodes and solid-state switch with such an elementSIEMENS AG·Filed 1994·Granted Mar 9, 1999·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →