Inventor · disambiguated record
Chang-Ming Dai
Also filed as: DAI CHANG · DAI CHANG-MING
24 granted patents·1 pending application·876 citations·filing 1995–2019
97Inventor score
Files withIND TECH RES INST16TAIWAN SEMICONDUCTOR MFG6BEIJING BOE OPTOELECTRONICS TECH CO LTD1CROWNINGTEK INC1WORLDWIDE SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
25 records- 0190US5935762ATwo-layered TSI process for dual damascene patterningIND TECH RES INST·Filed 1997·Granted Aug 10, 1999·118 cites·27 claims
- 0290US5882996AMethod of self-aligned dual damascene patterning using developer soluble arc interstitial layerIND TECH RES INST·Filed 1997·Granted Mar 16, 1999·108 cites·31 claims
- 0389US6711732B1Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution eraTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 23, 2004·25 cites·10 claims
- 0488US5877076AOpposed two-layered photoresist process for dual damascene patterningIND TECH RES INST·Filed 1997·Granted Mar 2, 1999·98 cites·28 claims
- 0587US5670404AMethod for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layerIND TECH RES INST·Filed 1996·Granted Sep 23, 1997·98 cites·23 claims
- 0683US7131102B2Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution eraTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 31, 2006·15 cites·14 claims
- 0781US5877075ADual damascene process using single photoresist processIND TECH RES INST·Filed 1997·Granted Mar 2, 1999·65 cites·29 claims
- 0874US5976968ASingle-mask dual damascene processes by using phase-shifting maskIND TECH RES INST·Filed 1997·Granted Nov 2, 1999·38 cites·12 claims
- 0973US5691215AMethod for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposureIND TECH RES INST·Filed 1996·Granted Nov 25, 1997·59 cites·20 claims
- 1072US6045954AFormation of silicon nitride film for a phase shift mask at 193 nmIND TECH RES INST·Filed 1998·Granted Apr 4, 2000·29 cites·7 claims
- 1172US5710076AMethod for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coatingIND TECH RES INST·Filed 1996·Granted Jan 20, 1998·52 cites·26 claims
- 1270US5604157AReduced notching of polycide gates using silicon anti reflection layerIND TECH RES INST·Filed 1995·Granted Feb 18, 1997·39 cites·17 claims
- 1367US6174781B1Dual damascene process for capacitance fabrication of DRAMWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·34 cites·6 claims
- 1466US6291118B1Elimination of proximity effect in photoresistIND TECH RES INST·Filed 2000·Granted Sep 18, 2001·8 cites·9 claims
- 1565US5916717AProcess utilizing relationship between reflectivity and resist thickness for inhibition of side effect caused by halftone phase shift masksIND TECH RES INST·Filed 1998·Granted Jun 29, 1999·24 cites·30 claims
- 1661US6660653B1Dual trench alternating phase shift mask fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 9, 2003·19 cites·13 claims
- 1758US6830702B2Single trench alternating phase shift mask fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 14, 2004·4 cites·14 claims
- 1857US5670281AMasks and methods of forming masks which avoid phase conflict problems in phase shifting masksIND TECH RES INST·Filed 1996·Granted Sep 23, 1997·16 cites·27 claims
- 1954US11583856B2Bio-information detection substrate and gene chipBEIJING BOE OPTOELECTRONICS TECH CO LTD·Filed 2019·Granted Feb 21, 2023·0 cites·19 claims
- 2052US6180512B1Single-mask dual damascene processes by using phase-shifting maskIND TECH RES INST·Filed 1999·Granted Jan 30, 2001·15 cites·19 claims
- 2150US7036108B2Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution eraTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 25, 2006·1 cites·11 claims
- 2250US7013453B2Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERATAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 14, 2006·1 cites·10 claims
- 2346US6319568B1Formation of silicon nitride film for a phase shift mask at 193 nmIND TECH RES INST·Filed 1999·Granted Nov 20, 2001·9 cites·9 claims
- 2436US2017153540A1Photomask blank and photomaskCROWNINGTEK INC·Filed 2015·Application pending·0 cites
- 2531US6040119AElimination of proximity effect in photoresistIND TECH RES INST·Filed 1998·Granted Mar 21, 2000·1 cites·5 claims
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