Inventor · disambiguated record
Hyun-Seok Lim
Also filed as: LIM HYUN-SEOK
36 granted patents·15 pending applications·3,394 citations·filing 1999–2021
97Inventor score
Top patents by PatentIndex Score
51 records- 0198US6590251B2Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 8, 2003·627 cites·13 claims
- 0298US6399491B2Method of manufacturing a barrier metal layer using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·342 cites·11 claims
- 0398US6348376B2Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 19, 2002·254 cites·11 claims
- 0498US6287965B1Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 11, 2001·1.3k cites·23 claims
- 0597US6391769B1Method for forming metal interconnection in semiconductor device and interconnection structure fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 21, 2002·177 cites·21 claims
- 0697US6358829B2Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layerSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 19, 2002·381 cites·25 claims
- 0796US6372598B2Method of forming selective metal layer and method of forming capacitor and filling contact hole using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 16, 2002·283 cites·32 claims
- 0891US8192592B2Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the sameKIM DO-HYUNG·Filed 2008·Granted Jun 5, 2012·12 cites·20 claims
- 0986US10026746B2Memory devices using etching stop layersLEE JEONG GIL·Filed 2017·Granted Jul 17, 2018·8 cites·20 claims
- 1084US11018045B2Deposition apparatus including upper shower head and lower shower headSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 25, 2021·5 cites·13 claims
- 1179US10074560B2Method of manufacturing semiconductor deviceYOON KI HYUN·Filed 2017·Granted Sep 11, 2018·3 cites·17 claims
- 1277US7452783B2Capacitor for a semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 18, 2008·6 cites·16 claims
- 1377US7364967B2Methods of forming storage capacitors for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·6 cites·10 claims
- 1475US7812332B2Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·7 cites·20 claims
- 1573US9865617B2Semiconductor deviceHAN HAUK·Filed 2017·Granted Jan 9, 2018·2 cites·19 claims
- 1670US7524724B2Method of forming titanium nitride layer and method of fabricating capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 28, 2009·4 cites·39 claims
- 1764US7719045B2Capacitor for a semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 18, 2010·2 cites·8 claims
- 1861US7199019B2Method for forming tungsten contact plugSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 3, 2007·7 cites·33 claims
- 1960US10437362B2Touch window and display device comprising sameLG INNOTEK CO LTD·Filed 2014·Granted Oct 8, 2019·1 cites·10 claims
- 2060US8232638B2Interconnection structure having oxygen trap pattern in semiconductor deviceMA YOUNG-TAE·Filed 2008·Granted Jul 31, 2012·4 cites·17 claims
- 2158US7736844B2Overlay mark and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 15, 2010·1 cites·20 claims
- 2255US11854979B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·17 claims
- 2354US8138490B2Variable resistance non-volatile memory cells and methods of fabricating sameOH GYU-HWAN·Filed 2010·Granted Mar 20, 2012·1 cites·20 claims
- 2454US6806135B2Method of manufacturing a semiconductor device using a two-step deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 19, 2004·5 cites·17 claims
- 2552US9667248B2Touch panelLG INNOTEK CO LTD·Filed 2013·Granted May 30, 2017·1 cites·16 claims
- 2650US10007366B2Touch window and display including the sameLG INNOTEK CO LTD·Filed 2014·Granted Jun 26, 2018·0 cites·17 claims
- 2748US10734493B2Semiconductor memory device and conductive structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·0 cites·16 claims
- 2848US2008185624A1Storage capacitors for semiconductor devicesSAMSUG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2947US12462976B2Method for manufacturing rare earth magnetLG INNOTEK CO LTD·Filed 2019·Granted Nov 4, 2025·0 cites·7 claims
- 3047US7759159B2Variable resistance non-volatile memory cells and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·1 cites·28 claims
- 3147US2011073832A1Phase-change memory deviceLIM HYUN-SEOK·Filed 2010·Application pending·0 cites
- 3246US2007272950A1Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3345US10797143B2Semiconductor devices and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 6, 2020·0 cites·15 claims
- 3445US10680008B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 3545US2008003815A1Method of forming a barrier metal layer of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3645US2007289609A1Method for cleaning a process chamberSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3744US7538046B2Method of cleaning semiconductor device fabrication apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 26, 2009·0 cites·11 claims
- 3844US2008194106A1Method of forming a titanium aluminum nitride layer and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3943US2009008623A1Methods of fabricating nonvolatile memory device and a nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4042US10175800B2Electrode member and touch window comprising the sameLG INNOTEK CO LTD·Filed 2015·Granted Jan 8, 2019·0 cites·18 claims
- 4142US7141512B2Method of cleaning semiconductor device fabrication apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·2 cites·5 claims
- 4240US2002081844A1Method of manufacturing a barrier metal layer using atomic layer depositionFiled 2002·Application pending·0 cites
- 4339US2006160337A1Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the sameKIM YOUNG-JIN·Filed 2005·Application pending·0 cites
- 4438US11345998B2Deposition apparatus including upper shower head and lower shower headSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 31, 2022·0 cites·20 claims
- 4538US10008410B2Deposition apparatus including UV annealing unit and method for fabricating non-volatile memory device by using the deposition apparatusPARK KWANG CHUL·Filed 2017·Granted Jun 26, 2018·0 cites·20 claims
- 4638US2004259344A1Method for forming a metal layer method for manufacturing a semiconductor device using the sameFiled 2004·Application pending·0 cites
- 4738US2017220161A1Touch windowLG INNOTEK CO LTD·Filed 2015·Application pending·0 cites
- 4837US2012004476A1Fullerene Derivatives and Organic Electronic Device Comprising the SameYOON SUNG CHEOL·Filed 2010·Application pending·0 cites
- 4937US2006110533A1Methods and apparatus for forming a titanium nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 5034US2017265780A1Band type sensor and wearable device having the sameLG INNOTEK CO LTD·Filed 2015·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →