Inventor · disambiguated record
Ju-Hyuck Chung
Also filed as: CHUNG JU-HYUCK
9 granted patents·7 pending applications·173 citations·filing 1999–2011
88Inventor score
Top patents by PatentIndex Score
16 records- 0194US7176126B2Method of fabricating dual damascene interconnectionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 13, 2007·39 cites·18 claims
- 0288US6464794B1Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 15, 2002·75 cites·9 claims
- 0378US6291342B2Methods of forming titanium nitride composite layers using composite gases having increasing TiCl4 to NH3 ratiosSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 18, 2001·19 cites·2 claims
- 0472US7645695B2Method of manufacturing a semiconductor elementSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·3 cites·20 claims
- 0566US7553761B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 30, 2009·3 cites·23 claims
- 0665US6797109B2Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 28, 2004·7 cites·3 claims
- 0765US6207557B1Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO INC·Filed 1999·Granted Mar 27, 2001·27 cites·16 claims
- 0852US7884425B2Non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·0 cites·19 claims
- 0952US2006278341A1Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1046US2006049439A1Image device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1145US8217467B2Semiconductor memory devicesSEL JONG-SUN·Filed 2011·Granted Jul 10, 2012·0 cites·11 claims
- 1243US2008124917A1Method of manufacturing a semiconductor device having air gapsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1342US2008073787A1Method forming metal interconnection filling recessed region using electro-plating techniqueOH JUN-HWAN·Filed 2007·Application pending·0 cites
- 1441US2003000648A1Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 1541US2003013315A1Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulatesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 1635US2006024941A1Method of forming metal interconnect of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →