Inventor · disambiguated record
Yanping Shen
Also filed as: SHEN YANPING
28 granted patents·65 citations·filing 2014–2022
93Inventor score
Top patents by PatentIndex Score
28 records- 0197US10249538B1Method of forming vertical field effect transistors with different gate lengths and a resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·22 cites·19 claims
- 0295US9887094B1Methods of forming EPI semiconductor material on the source/drain regions of a FinFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 6, 2018·14 cites·12 claims
- 0394US9443771B1Methods to thin down RMG sidewall layers for scalability of gate-last planar CMOS and FinFET technologyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 13, 2016·10 cites·17 claims
- 0487US11482456B2Forming two portion spacer after metal gate and contact formation, and related IC structureGLOBALFOUNDRIES US INC·Filed 2019·Granted Oct 25, 2022·4 cites·15 claims
- 0587US10553707B1FinFETs having gates parallel to finsGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 4, 2020·5 cites·20 claims
- 0683US10068902B1Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·4 cites·4 claims
- 0781US11342453B2Field effect transistor with asymmetric gate structure and methodGLOBALFOUNDRIES US INC·Filed 2020·Granted May 24, 2022·1 cites·14 claims
- 0880US11785860B2Top electrode for a memory device and methods of making such a memory deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 10, 2023·1 cites·20 claims
- 0972US11171237B2Middle of line gate structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 9, 2021·1 cites·19 claims
- 1072US11094827B2Semiconductor devices with uniform gate height and method of forming sameGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 17, 2021·1 cites·20 claims
- 1170US10811422B2Semiconductor recess to epitaxial regions and related integrated circuit structureGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 20, 2020·1 cites·19 claims
- 1269US11812670B2Memory device comprising a top via electrode and methods of making such a memory deviceGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 7, 2023·0 cites·16 claims
- 1363US9798463B2Character input method and apparatusTENCENT TECH SHENZHEN CO LTD·Filed 2014·Granted Oct 24, 2017·1 cites·12 claims
- 1461US11569437B2Memory device comprising a top via electrode and methods of making such a memory deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 31, 2023·0 cites·15 claims
- 1557US11264504B2Active and dummy fin structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
- 1654US11721728B2Self-aligned contactGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 8, 2023·0 cites·19 claims
- 1754US11222844B2Via structures for use in semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 11, 2022·0 cites·20 claims
- 1851US11239336B2Integrated circuit structure with niobium-based silicide layer and methods to form sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 1, 2022·0 cites·12 claims
- 1950US10818498B1Shaped gate caps in spacer-lined openingsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·0 cites·19 claims
- 2050US10636894B2Fin-type transistors with spacers on the gatesGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
- 2148US11164794B2Semiconductor structures in a wide gate pitch region of semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 2, 2021·0 cites·19 claims
- 2248US10833171B1Spacer structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·0 cites·8 claims
- 2348US10700173B2FinFET device with a wrap-around silicide source/drain contact structureGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 30, 2020·0 cites·16 claims
- 2446US11908857B2Semiconductor devices having late-formed isolation structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 20, 2024·0 cites·19 claims
- 2546US11502200B2Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor materialGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 15, 2022·0 cites·14 claims
- 2641US11437568B2Memory device and methods of making such a memory deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 6, 2022·0 cites·13 claims
- 2739US10164010B1Finfet diffusion break having protective liner in fin insulatorGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 2837US10461155B2Epitaxial region for embedded source/drain region having uniform thicknessGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 29, 2019·0 cites·10 claims
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