Inventor · disambiguated record
Puo-Yu Chiang
Also filed as: CHIANG PUO-YU
19 granted patents·3 pending applications·96 citations·filing 2006–2024
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG8MEDIATEK INC7HUANG TSUNG-YI2SU RU-YI2TAIWAN SEMICONDUCTOR MFG CO LTD2
Top patents by PatentIndex Score
22 records- 0192US8159029B2High voltage device having reduced on-state resistanceSU RU-YI·Filed 2008·Granted Apr 17, 2012·21 cites·20 claims
- 0290US12166108B2Strained transistor with conductive plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·2 cites·20 claims
- 0386US8389341B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2011·Granted Mar 5, 2013·8 cites·14 claims
- 0484US7508032B2High voltage device with low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 24, 2009·13 cites·18 claims
- 0583US7768071B2Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 3, 2010·9 cites·19 claims
- 0681US8507988B2High voltage devices, systems, and methods for forming the high voltage devicesYAO CHIH-WEN·Filed 2010·Granted Aug 13, 2013·9 cites·17 claims
- 0780US7816744B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 19, 2010·7 cites·18 claims
- 0878US7476591B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 13, 2009·6 cites·20 claims
- 0977US7989890B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·6 cites·19 claims
- 1076US7928508B2Disconnected DPW structures for improving on-state performance of MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Apr 19, 2011·7 cites·20 claims
- 1172US8129783B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2008·Granted Mar 6, 2012·4 cites·20 claims
- 1271US2025063750A1Strained transistor with conductive plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1367US8158475B2Gate electrodes of HVMOS devices having non-uniform doping concentrationsSU RU-YI·Filed 2010·Granted Apr 17, 2012·2 cites·17 claims
- 1459US7781859B2Schottky diode structures having deep wells for improving breakdown voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 24, 2010·2 cites·15 claims
- 1558US9029223B1MOS device with isolated drain and method for fabricating the sameMEDIATEK INC·Filed 2014·Granted May 12, 2015·0 cites·10 claims
- 1658US9006068B1MOS device with isolated drain and method for fabricating the sameMEDIATEK INC·Filed 2014·Granted Apr 14, 2015·0 cites·10 claims
- 1755US9006825B1MOS device with isolated drain and method for fabricating the sameMEDIATEK INC·Filed 2013·Granted Apr 14, 2015·0 cites·10 claims
- 1846US10008593B2Radio frequency semiconductor deviceMEDIATEK INC·Filed 2014·Granted Jun 26, 2018·0 cites·19 claims
- 1943US9570630B2Schottky diode structureMEDIATEK INC·Filed 2013·Granted Feb 14, 2017·0 cites·30 claims
- 2042US2016056285A1High-voltage metal-oxide-semiconductor transistor device with increased cutoff frequencyMEDIATEK INC·Filed 2014·Application pending·0 cites
- 2139US10177225B2Electronic component and manufacturing method thereofMEDIATEK INC·Filed 2016·Granted Jan 8, 2019·0 cites·16 claims
- 2235US2011260245A1Cost Effective Global Isolation and Power Dissipation For Power Integrated Circuit DeviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →