Inventor · disambiguated record
Zoltan Ring
Also filed as: RING ZOLTAN
24 granted patents·1 pending application·1,205 citations·filing 2000–2016
97Inventor score
Top patents by PatentIndex Score
25 records- 0198US7906799B2Nitride-based transistors with a protective layer and a low-damage recessCREE INC·Filed 2006·Granted Mar 15, 2011·122 cites·28 claims
- 0298US7892974B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2006·Granted Feb 22, 2011·80 cites·23 claims
- 0398US7125786B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2005·Granted Oct 24, 2006·121 cites·19 claims
- 0498US7045404B2Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereofCREE INC·Filed 2004·Granted May 16, 2006·184 cites·52 claims
- 0598US6515303B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2001·Granted Feb 4, 2003·140 cites·17 claims
- 0698US6475889B1Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2000·Granted Nov 5, 2002·148 cites·16 claims
- 0797US7855401B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2007·Granted Dec 21, 2010·97 cites·31 claims
- 0897US6649497B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2001·Granted Nov 18, 2003·113 cites·5 claims
- 0996US6946739B2Layered semiconductor devices with conductive viasCREE INC·Filed 2003·Granted Sep 20, 2005·105 cites·13 claims
- 1095US8563372B2Methods of forming contact structures including alternating metal and silicon layers and related devicesHAGLEITNER HELMUT·Filed 2010·Granted Oct 22, 2013·40 cites·30 claims
- 1193US7525122B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2005·Granted Apr 28, 2009·22 cites·39 claims
- 1288US7858460B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2009·Granted Dec 28, 2010·10 cites·25 claims
- 1386US9812338B2Encapsulation of advanced devices using novel PECVD and ALD schemesCREE INC·Filed 2013·Granted Nov 7, 2017·8 cites·17 claims
- 1479US9490169B2Method of forming vias in silicon carbide and resulting devices and circuitsRING ZOLTAN·Filed 2010·Granted Nov 8, 2016·4 cites·12 claims
- 1574US9142631B2Multilayer diffusion barriers for wide bandgap Schottky barrier devicesMIECZKOWSKI VAN·Filed 2010·Granted Sep 22, 2015·4 cites·8 claims
- 1672US9761439B2PECVD protective layers for semiconductor devicesCREE INC·Filed 2014·Granted Sep 12, 2017·2 cites·15 claims
- 1768US8994073B2Hydrogen mitigation schemes in the passivation of advanced devicesCREE INC·Filed 2012·Granted Mar 31, 2015·2 cites·23 claims
- 1865US9934983B2Stress mitigation for thin and thick films used in semiconductor circuitryCREE INC·Filed 2014·Granted Apr 3, 2018·2 cites·28 claims
- 1963US8202796B2Method of forming vias in silicon carbide and resulting devices and circuitsRING ZOLTAN·Filed 2011·Granted Jun 19, 2012·1 cites·7 claims
- 2059US10367074B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2016·Granted Jul 30, 2019·0 cites·9 claims
- 2151US11316028B2Nitride-based transistors with a protective layer and a low-damage recessSHEPPARD SCOTT T·Filed 2011·Granted Apr 26, 2022·0 cites·17 claims
- 2248US9530647B2Devices including ultra-short gates and methods of forming sameCREE INC·Filed 2013·Granted Dec 27, 2016·0 cites·23 claims
- 2343US9269662B2Using stress reduction barrier sub-layers in a semiconductor dieCREE INC·Filed 2012·Granted Feb 23, 2016·0 cites·20 claims
- 2441US2008042145A1Diffusion barrier for light emitting diodesHAGLEITNER HELMUT·Filed 2006·Application pending·0 cites
- 2540US9607955B2Contact padMIECZKOWSKI VAN·Filed 2010·Granted Mar 28, 2017·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →