Inventor · disambiguated record
Kevin Q. Yin
Also filed as: YIN KEVIN · YIN KEVIN Q
21 granted patents·125 citations·filing 1999–2022
94Inventor score
Top patents by PatentIndex Score
21 records- 0184US7772673B1Deep trench isolation and method for forming sameNEWPORT FAB LLC·Filed 2007·Granted Aug 10, 2010·12 cites·17 claims
- 0280US11101605B2Male plug, female socket and board-to-board RF connectorELECTRIC CONNECTOR TECH CO LTD·Filed 2020·Granted Aug 24, 2021·2 cites·19 claims
- 0379US7291536B1Fabricating a self-aligned bipolar transistor having increased manufacturabilityNEWPORT FAB LLC·Filed 2005·Granted Nov 6, 2007·7 cites·14 claims
- 0473US6586307B1Method for controlling an emitter window opening in an HBT and related structureNEWPORT FAB LLC·Filed 2002·Granted Jul 1, 2003·14 cites·10 claims
- 0571US7015115B1Method for forming deep trench isolation and related structureNEWPORT FAB LLC·Filed 2003·Granted Mar 21, 2006·18 cites·8 claims
- 0671US6830967B1Method for forming CMOS transistor spacers in a BiCMOS processNEWPORT FAB LLC·Filed 2002·Granted Dec 14, 2004·14 cites·24 claims
- 0770US6797580B1Method for fabricating a bipolar transistor in a BiCMOS process and related structureNEWPORT FAB LLC·Filed 2003·Granted Sep 28, 2004·13 cites·16 claims
- 0868US6992338B1CMOS transistor spacers formed in a BiCMOS processNEWPORT FAB LLC·Filed 2004·Granted Jan 31, 2006·11 cites·12 claims
- 0964US6995449B1Deep trench isolation region with reduced-size cavities in overlying field oxideNEWPORT FAB LLC·Filed 2004·Granted Feb 7, 2006·10 cites·19 claims
- 1059US6770541B1Method for hard mask removal for deep trench isolation and related structureNEWPORT FAB LLC·Filed 2003·Granted Aug 3, 2004·7 cites·7 claims
- 1147US6894328B2Self-aligned bipolar transistor having recessed spacers and method for fabricating sameNEWPORT FAB LLC·Filed 2003·Granted May 17, 2005·3 cites·13 claims
- 1247US6765243B1HBT having a controlled emitter window openingNEWPORT FAB LLC·Filed 2002·Granted Jul 20, 2004·2 cites·12 claims
- 1346US7064415B1Self-aligned bipolar transistor having increased manufacturabilityNEWPORT FAB LLC·Filed 2004·Granted Jun 20, 2006·2 cites·11 claims
- 1446US6867440B1Self-aligned bipolar transistor without spacers and method for fabricating sameNEWPORT FAB LLC·Filed 2003·Granted Mar 15, 2005·2 cites·12 claims
- 1543US7282418B1Method for fabricating a self-aligned bipolar transistor without spacersNEWPORT FAB LLC·Filed 2004·Granted Oct 16, 2007·1 cites·6 claims
- 1639US7994611B1Bipolar transistor fabricated in a biCMOS processNEWPORT FAB LLC·Filed 2004·Granted Aug 9, 2011·0 cites·10 claims
- 1739US6764913B1Method for controlling an emitter window opening in an HBT and related structureNEWPORT FAB LLC·Filed 2003·Granted Jul 20, 2004·0 cites·19 claims
- 1837US11784444B2Fully-shielded high-frequency connector and connector assemblyELECTRIC CONNECTOR TECH CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·18 claims
- 1937US7033898B1Method for fabricating a self-aligned bipolar transistor having recessed spacersNEWPORT FAB LLC·Filed 2004·Granted Apr 25, 2006·0 cites·7 claims
- 2037US6924196B1Anti-reflective coating and process using an anti-reflective coatingNEWPORT FAB LLC·Filed 1999·Granted Aug 2, 2005·7 cites·21 claims
- 2135US6979626B2Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structureNEWPORT FAB LLC·Filed 2003·Granted Dec 27, 2005·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →