Inventor · disambiguated record
Nobuaki Hamanaka
Also filed as: HAMANAKA NOBUAKI
11 granted patents·6 pending applications·109 citations·filing 1999–2022
90Inventor score
Files withNEC CORP6NEC ELECTRONICS CORP6NEC ENERGY DEVICES LTD23DOM ALLIANCE INC1RENESAS ELECTRONICS CORP1
Top patents by PatentIndex Score
17 records- 0186US6436783B1Method of forming MOS transistorNEC CORP·Filed 2000·Granted Aug 20, 2002·38 cites·12 claims
- 0279US7217654B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2004·Granted May 15, 2007·18 cites·5 claims
- 0373US6337272B1Method of manufacturing a semiconductor deviceNEC CORP·Filed 2000·Granted Jan 8, 2002·20 cites·28 claims
- 0463US10038194B2Negative electrode, method for producing the same, and batteryNEC ENERGY DEVICES LTD·Filed 2014·Granted Jul 31, 2018·0 cites·20 claims
- 0560US2023133495A1Highly durable lithium secondary battery3DOM ALLIANCE INC·Filed 2022·Application pending·0 cites
- 0655US6544890B2Process for fabricating semiconductor device having silicide layer with low resistance and uniform profile and sputtering system used thereinNEC CORP·Filed 2000·Granted Apr 8, 2003·5 cites·21 claims
- 0753US7199058B2Method of manufacturing a semiconductor device and apparatus for manufacturing a semiconductor deviceNEC ELECTRONICS CORP·Filed 2004·Granted Apr 3, 2007·4 cites·14 claims
- 0852US6821687B2Photo mask for fabricating semiconductor device having dual damascene structureNEC ELECTRONICS CORP·Filed 2002·Granted Nov 23, 2004·5 cites·20 claims
- 0952US6569766B1Method for forming a silicide of metal with a high melting point in a semiconductor deviceNEC ELECTRONICS CORP·Filed 2000·Granted May 27, 2003·5 cites·12 claims
- 1052US2007096331A1Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 1151US6482737B2Fabrication method of implanting silicon-ions into the silicon substrateNEC CORP·Filed 2001·Granted Nov 19, 2002·5 cites·10 claims
- 1249US6548421B1Method for forming a refractory-metal-silicide layer in a semiconductor deviceNEC CORP·Filed 2000·Granted Apr 15, 2003·4 cites·12 claims
- 1340US2003170993A1Semiconductor device and method of manufacturing the sameFiled 2002·Application pending·0 cites
- 1437US2016351902A1Positive electrode for lithium ion secondary battery and lithium ion secondary battery using sameNEC ENERGY DEVICES LTD·Filed 2015·Application pending·0 cites
- 1536US2010289150A1Semiconductor device, designing method for semiconductor device, computer-readable medium, and manufacturing method for semiconductor deviceNEC ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 1636US2010330799A1Semiconductor device and process for producing the sameRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 1735US6271549B1Process for fabricating a metal silicide layer of a semiconductor and apparatusNEC CORP·Filed 1999·Granted Aug 7, 2001·5 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →