Inventor · disambiguated record
Naoki Takeguchi
Also filed as: TAKEGUCHI NAOKI
31 granted patents·8 pending applications·354 citations·filing 2002–2024
96Inventor score
Files withSANDISK TECHNOLOGIES LLC18SANDISK TECHNOLOGIES INC8TAKEGUCHI NAOKI4FURUKAWA BATTERY CO LTD3SANDISK 3D LLC2
Top patents by PatentIndex Score
39 records- 0198US9159739B2Floating gate ultrahigh density vertical NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 13, 2015·70 cites·27 claims
- 0297US9608043B2Method of operating memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 28, 2017·19 cites·20 claims
- 0397US9230984B1Three dimensional memory device having comb-shaped source electrode and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·53 cites·28 claims
- 0496US9887240B2Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Feb 6, 2018·14 cites·20 claims
- 0596US9281384B2Ultraviolet blocking structure and method for semiconductor deviceTAKEGUCHI NAOKI·Filed 2008·Granted Mar 8, 2016·77 cites·18 claims
- 0695US10608010B2Three-dimensional memory device containing replacement contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 31, 2020·28 cites·11 claims
- 0795US10128261B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 13, 2018·14 cites·25 claims
- 0894US9601508B2Blocking oxide in memory opening integration scheme for three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 21, 2017·11 cites·15 claims
- 0992US9356074B1Memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK 3D LLC·Filed 2014·Granted May 31, 2016·13 cites·13 claims
- 1091US10381372B2Selective tungsten growth for word lines of a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 13, 2019·10 cites·12 claims
- 1191US9728499B2Set of stepped surfaces formation for a multilevel interconnect structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 8, 2017·14 cites·12 claims
- 1288US12176203B2Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 24, 2024·1 cites·4 claims
- 1387US10916504B2Three-dimensional memory device including electrically conductive layers with molybdenum-containing linersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 9, 2021·5 cites·19 claims
- 1485US11377733B2Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 5, 2022·1 cites·13 claims
- 1578US9818798B2Vertical thin film transistors in non-volatile storage systemsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·2 cites·14 claims
- 1677US2025158017A1Magnesium secondary battery and method for manufacturing magnesium secondary batteryFURUKAWA BATTERY CO LTD·Filed 2024·Application pending·0 cites
- 1777US2025158108A1Magnesium secondary battery and method for manufacturing magnesium secondary batteryFURUKAWA BATTERY CO LTD·Filed 2024·Application pending·0 cites
- 1872US9362338B2Vertical thin film transistors in non-volatile storage systemsSANDISK 3D LLC·Filed 2014·Granted Jun 7, 2016·2 cites·16 claims
- 1972US6822831B2Magnetic thin film, magnetic thin film forming method, and recording headFUJITSU LTD·Filed 2002·Granted Nov 23, 2004·13 cites·8 claims
- 2071US10616984B2LED lighting device and luminairePANASONIC IP MAN CO LTD·Filed 2019·Granted Apr 7, 2020·1 cites·15 claims
- 2170US8835248B2Method for forming metal wireTAKEGUCHI NAOKI·Filed 2012·Granted Sep 16, 2014·2 cites·21 claims
- 2266US8749012B2Methods and structures for discharging plasma formed during the fabrication of semiconductor deviceHIGASHI MASAHIKO·Filed 2007·Granted Jun 10, 2014·3 cites·7 claims
- 2366US2023016319A1Positive electrode for lithium ion secondary battery and lithium ion secondary batteryFURUKAWA BATTERY CO LTD·Filed 2022·Application pending·0 cites
- 2461US12382638B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 5, 2025·0 cites·20 claims
- 2560US12414296B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 9, 2025·0 cites·10 claims
- 2660US2024306392A1Three-dimensional memory device including coaxial double contact via structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2759US9334578B2Electroplating apparatus and method with uniformity improvementTAKEGUCHI NAOKI·Filed 2008·Granted May 10, 2016·0 cites·13 claims
- 2858US7902056B2Plasma treated metal silicide layer formationSPANSION LLC·Filed 2008·Granted Mar 8, 2011·1 cites·19 claims
- 2957US12217965B2Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 4, 2025·0 cites·12 claims
- 3054US11942429B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Mar 26, 2024·0 cites·14 claims
- 3154US9330969B2Air gap formation between bit lines with top protectionSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 3, 2016·0 cites·15 claims
- 3253US12185540B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 31, 2024·0 cites·2 claims
- 3352US9337085B2Air gap formation between bit lines with side protectionSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 10, 2016·0 cites·9 claims
- 3451US12046285B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 23, 2024·0 cites·3 claims
- 3551US2023223267A1Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressantSANDISK TECHNOLOGIES LLC·Filed 2022·Application pending·0 cites
- 3650US2022406794A1Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Application pending·0 cites
- 3746US9401279B2Transistor gate and process for making transistor gateSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 26, 2016·0 cites·6 claims
- 3845US2017247794A1Single chamber multi-partition deposition tool and method of operating sameSANDISK TECHNOLOGIES LLC·Filed 2016·Application pending·0 cites
- 3934US2006281242A1Semiconductor device and fabrication method thereforTAKEGUCHI NAOKI·Filed 2006·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →