Inventor · disambiguated record
Stefan Eichler
Also filed as: EICHLER STEFAN
18 granted patents·1 pending application·66 citations·filing 2000–2021
92Inventor score
Files withFREIBERGER COMPOUND MAT GMBH12KRETZER ULRICH2LEIBIGER GUNNAR2EICHLER STEFAN1JURISCH MANFRED1
Top patents by PatentIndex Score
19 records- 0187US7410540B2Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Aug 12, 2008·8 cites·14 claims
- 0284US9368585B2Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Jun 14, 2016·8 cites·8 claims
- 0378US11170989B2Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneityFREIBERGER COMPOUND MAT GMBH·Filed 2018·Granted Nov 9, 2021·2 cites·5 claims
- 0478US10460924B2Process for producing a gallium arsenide substrate which includes marangoni dryingFREIBERGER COMPOUND MAT GMBH·Filed 2014·Granted Oct 29, 2019·4 cites·10 claims
- 0577US8329295B2Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficientKRETZER ULRICH·Filed 2009·Granted Dec 11, 2012·4 cites·6 claims
- 0674US8025729B2Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal waferFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Sep 27, 2011·5 cites·22 claims
- 0773US8771560B2Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystalKRETZER ULRICH·Filed 2008·Granted Jul 8, 2014·2 cites·13 claims
- 0872US6355910B1Heating element for heating crucibles and arrangement of heating elementsFREIBERGER COMPOUND MAT GMBH·Filed 2000·Granted Mar 12, 2002·18 cites·17 claims
- 0970US12205815B2Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneityFREIBERGER COMPOUND MAT GMBH·Filed 2021·Granted Jan 21, 2025·0 cites·5 claims
- 1068US9181633B2Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal waferJURISCH MANFRED·Filed 2008·Granted Nov 10, 2015·4 cites·5 claims
- 1168US8652253B2Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystalEICHLER STEFAN·Filed 2008·Granted Feb 18, 2014·6 cites·30 claims
- 1264US8815392B2Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficientFREIBERGER COMPOUND MAT GMBH·Filed 2012·Granted Aug 26, 2014·0 cites·16 claims
- 1362US8048224B2Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrateFREIBERGER COMPOUND MAT GMBH·Filed 2007·Granted Nov 1, 2011·3 cites·21 claims
- 1458US9103048B2Device and process for producing poly-crystalline or multi-crystalline silicon; ingot as well as wafer of poly-crystalline or multi-crystalline silicon produced thereby, and use for the manufacture of solar cellsWEINERT BERNDT·Filed 2007·Granted Aug 11, 2015·1 cites·28 claims
- 1551US9074297B2Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyLEIBIGER GUNNAR·Filed 2008·Granted Jul 7, 2015·1 cites·19 claims
- 1646US11505847B2Method and apparatus for Ga-recoveryFREIBERGER COMPOUND MAT GMBH·Filed 2017·Granted Nov 22, 2022·0 cites·20 claims
- 1745US11965266B2Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocationsFREIBERGER COMPOUND MAT GMBH·Filed 2020·Granted Apr 23, 2024·0 cites·19 claims
- 1842US9856579B2Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxyLEIBIGER GUNNAR·Filed 2011·Granted Jan 2, 2018·0 cites·11 claims
- 1942US2007141814A1Process for producing a free-standing iii-n layer, and free-standing iii-n substrateFREIBERGER COMPOUND MAT GMBH·Filed 2006·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Stefan Eichler files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →