Inventor · disambiguated record
Man Gu
Also filed as: GU MAN · GU MAN-JI
23 granted patents·5 pending applications·7 citations·filing 2017–2024
90Inventor score
Top patents by PatentIndex Score
28 records- 0193US12020937B2Carbon implantation for thicker gate silicideGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 25, 2024·2 cites·7 claims
- 0277US11234067B1Headphone structureEASTECH HUIZHOU CO LTD·Filed 2020·Granted Jan 25, 2022·3 cites·16 claims
- 0376US10777463B2Formation of epi source/drain material on transistor devices and the resulting structuresGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 15, 2020·2 cites·18 claims
- 0469US12349459B1High-voltage semiconductor device structuresGLOBALFOUNDRIES US INC·Filed 2024·Granted Jul 1, 2025·0 cites·16 claims
- 0566US12132080B2FinFET with shorter fin height in drain region than source region and related methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 29, 2024·0 cites·15 claims
- 0665US11211453B1FinFET with shorter fin height in drain region than source region and related methodGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 28, 2021·0 cites·9 claims
- 0762US11843034B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 0861US12513995B2Substrates of semiconductor devices having varying thicknesses of semiconductor layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 30, 2025·0 cites·13 claims
- 0959US12389616B2Transistors with multiple silicide layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 1059US11721722B2Bipolar junction transistors including a stress linerGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1156US12295161B2Trench isolation having three portions with different materials, and LDMOS FET including sameGLOBALFOUNDRIES US INC·Filed 2022·Granted May 6, 2025·0 cites·19 claims
- 1254US11545575B2IC structure with fin having subfin extents with different lateral dimensionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 1354US2024429237A1Semiconductor device including diffusion break structure and method of forming semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1453US10755918B2Spacer with laminate linerGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
- 1551US11532745B2Integrated circuit structure including asymmetric, recessed source and drain region and method for forming sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 20, 2022·0 cites·18 claims
- 1651US11374002B2Transistors with hybrid source/drain regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 1751US11101364B2Field-effect transistors with diffusion blocking spacer sectionsGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 1851US10192791B1Semiconductor devices with robust low-k sidewall spacers and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·0 cites·20 claims
- 1949US11410998B2LDMOS finFET structure with buried insulator layer and method for forming sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 9, 2022·0 cites·7 claims
- 2049US11239366B2Transistors with an asymmetrical source and drainGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 1, 2022·0 cites·17 claims
- 2149US2023146952A1Transistor with faceted, raised source/drain regionGLOBALFOUNDRIES US INC·Filed 2021·Application pending·0 cites
- 2248US11289474B2Passive devices over polycrystalline semiconductor finsGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
- 2348US10971625B2Epitaxial structures of a semiconductor device having a wide gate pitchGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 6, 2021·0 cites·18 claims
- 2446US10964598B2Methods of forming source/drain regions of a FinFET device and the resulting structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 30, 2021·0 cites·18 claims
- 2545US2024030343A1Transistor structure with hybrid gate dielectric structure and asymmetric source/drain regionsGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 2644US10008456B1Laminated spacers for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 26, 2018·0 cites·19 claims
- 2744US2021249307A1Transistors with asymmetrically-positioned source/drain regionsGLOBALFOUNDRIES US INC·Filed 2020·Application pending·0 cites
- 2841US2021351293A1Novel gate structure for an ldmos transistor deviceGLOBALFOUNDRIES US INC·Filed 2020·Application pending·0 cites
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