Inventor · disambiguated record
Chih-Shan Chen
Also filed as: CHEN CHIH-MING · CHEN CHIH-SHAN
29 granted patents·6 pending applications·302 citations·filing 2003–2025
95Inventor score
Top patents by PatentIndex Score
35 records- 0198US9812363B1FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 7, 2017·237 cites·20 claims
- 0295US10038095B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
- 0394US10522408B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·8 cites·20 claims
- 0493US9112033B2Source/drain structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·9 cites·20 claims
- 0592US12002855B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·1 cites·20 claims
- 0692US10163715B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 0791US9527721B2Movement microelectromechanical systems (MEMS) packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 27, 2016·14 cites·20 claims
- 0890US10510875B2Source and drain structure with reduced contact resistance and enhanced mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 0990US10163898B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 1085US12237403B2Structure of a fin field effect transistor (FinFET) comprising epitaxial structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 1184US11522050B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 1281US11545562B2Source and drain structure with reduced contact resistance and enhanced mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 3, 2023·2 cites·20 claims
- 1379US2025359227A1Forming Source And Drain Features In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1477US11626508B2Structure of a fin field effect transistor (FinFET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 1577US2025311266A1Source and Drain Structure with Reduced Contact Resistance and Enhanced MobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1675US10515958B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 1775US9537008B2Source/drain structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·1 cites·20 claims
- 1874US11594534B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 1974US2024274668A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2073US10937894B2Structure of a fin field effect transistor (FinFET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 2, 2021·0 cites·20 claims
- 2172US11121255B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 2271US12432955B2Source and drain structure with reduced contact resistance and enhanced mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 2370US2024274666A1Forming Source And Drain Features In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2469US10497701B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 3, 2019·1 cites·20 claims
- 2567US10535757B2Structure of a fin field effect transistor (FinFET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 2666US10763366B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 2765US10868005B2FinFETs and methods of forming finFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·19 claims
- 2864US11004845B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 2963US10651309B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 3062US11984478B2Forming source and drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 3162US10636788B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·20 claims
- 3262US10158006B2Source/drain structure of a fin field effect transistor (FinFET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 18, 2018·0 cites·20 claims
- 3358US2025081529A1Semiconductor devices with epitaxial source/drain region with a bottom dielectric and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3451US11804329B2Transformer and manufacturing method of transformerLITE ON ELECTRONICS GUANGZHOU·Filed 2019·Granted Oct 31, 2023·0 cites·7 claims
- 3533US2004152268A1Novel method of fabricating split gate flash memory cell without select gate-to-drain bridgingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →