Inventor · disambiguated record
Wei-Yang Lo
Also filed as: LO WEI-YANG
11 granted patents·12 citations·filing 2015–2020
85Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11
Top patents by PatentIndex Score
11 records- 0190US10163898B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 0282US9929254B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 27, 2018·2 cites·20 claims
- 0381US9559207B2Semiconductor device having epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·2 cites·20 claims
- 0475US10515958B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 0573US10879399B2Method of manufacturing semiconductor device comprising doped gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·1 cites·20 claims
- 0672US10665719B2FinFET device with asymmetrical drain/source featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·1 cites·20 claims
- 0765US10868005B2FinFETs and methods of forming finFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·19 claims
- 0865US10770569B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
- 0964US10910496B2FinFET device with asymmetrical drain/source featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 2, 2021·0 cites·20 claims
- 1062US10319842B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 11, 2019·0 cites·20 claims
- 1150US11018259B2Semiconductor device comprising gate structure and doped gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 25, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →