Inventor · disambiguated record
Tung-Wen Cheng
Also filed as: CHENG TUNG-WEN
62 granted patents·2 pending applications·105 citations·filing 2013–2025
98Inventor score
Top patents by PatentIndex Score
64 records- 0197US10546956B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·13 cites·20 claims
- 0293US10811516B2Structure and formation method of semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·6 cites·20 claims
- 0392US10355135B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·5 cites·20 claims
- 0492US10164050B2Structure and formation method of semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·7 cites·20 claims
- 0592US9653605B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 16, 2017·6 cites·19 claims
- 0691US9620417B2Apparatus and method of manufacturing fin-FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·8 cites·19 claims
- 0791US9564528B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·5 cites·20 claims
- 0891US9508719B2Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 29, 2016·9 cites·20 claims
- 0990US10163898B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 1090US9991385B2Enhanced volume control by recess profile controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 5, 2018·8 cites·20 claims
- 1188US9627512B2Field effect transistor with non-doped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·5 cites·19 claims
- 1287US9799771B2FinFET and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 24, 2017·5 cites·20 claims
- 1386US2023352592A1Fin Field Effect Transistor (FinFET) Device and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1484US2025352880A1Method of manufacturing semiconductor devices and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1583US9142672B2Strained source and drain (SSD) structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 22, 2015·4 cites·20 claims
- 1682US12051752B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 1782US9929254B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 27, 2018·2 cites·20 claims
- 1881US9559207B2Semiconductor device having epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·2 cites·20 claims
- 1980US10818794B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·1 cites·20 claims
- 2080US9853154B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·3 cites·20 claims
- 2177US11721762B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 2277US11705519B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 2376US9646871B2Semiconductor structure with shallow trench isolation and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 9, 2017·4 cites·13 claims
- 2475US11158744B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·0 cites·20 claims
- 2575US10515958B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·20 claims
- 2674US11594635B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 2774US11594534B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 2874US11342458B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 2974US10964819B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 30, 2021·0 cites·20 claims
- 3073US10879399B2Method of manufacturing semiconductor device comprising doped gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·1 cites·20 claims
- 3172US10665719B2FinFET device with asymmetrical drain/source featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·1 cites·20 claims
- 3271US12446294B2Method of manufacturing semiconductor devices having different gate dielectric thickness within one transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 3371US11120974B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 3469US11631748B2Structure and formation method of semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·0 cites·20 claims
- 3569US10840378B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·20 claims
- 3669US10497701B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 3, 2019·1 cites·20 claims
- 3769US9660052B2Strained source and drain (SSD) structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·1 cites·20 claims
- 3867US11043593B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 3966US10923353B2Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·0 cites·20 claims
- 4066US10804396B2Embedded source or drain region of transistor with downward tapered region under facet regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 4165US10868005B2FinFETs and methods of forming finFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·19 claims
- 4265US10770569B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
- 4365US10686077B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 4464US11004845B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 4564US10910496B2FinFET device with asymmetrical drain/source featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 2, 2021·0 cites·20 claims
- 4664US10483394B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
- 4764US10164108B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·0 cites·20 claims
- 4862US10636788B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·20 claims
- 4962US10319842B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 11, 2019·0 cites·20 claims
- 5062US10084060B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 25, 2018·1 cites·19 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Tung-Wen Cheng files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →