Inventor · disambiguated record
Yi-Chou Chen
Also filed as: CHEN YI-CHOU
61 granted patents·13 pending applications·1,490 citations·filing 2002–2025
99Inventor score
Top patents by PatentIndex Score
74 records- 0199US6850432B2Laser programmable electrically readable phase-change memory method and deviceMACRONIX INT CO LTD·Filed 2002·Granted Feb 1, 2005·277 cites·27 claims
- 0298US8067815B2Aluminum copper oxide based memory devices and methods for manufactureCHIEN WEI-CHIH·Filed 2008·Granted Nov 29, 2011·104 cites·21 claims
- 0398US7688619B2Phase change memory cell and manufacturing methodMACRONIX INT CO LTD·Filed 2006·Granted Mar 30, 2010·289 cites·17 claims
- 0497US7423300B2Single-mask phase change memory elementMACRONIX INT CO LTD·Filed 2006·Granted Sep 9, 2008·112 cites·17 claims
- 0595US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 0695US8134139B2Programmable metallization cell with ion buffer layerLIN YU-YU·Filed 2010·Granted Mar 13, 2012·46 cites·31 claims
- 0795US7608503B2Side wall active pin memory and manufacturing methodMACRONIX INT CO LTD·Filed 2005·Granted Oct 27, 2009·30 cites·34 claims
- 0895US7501648B2Phase change materials and associated memory devicesIBM·Filed 2006·Granted Mar 10, 2009·23 cites·35 claims
- 0995US7038230B2Horizontal chalcogenide element defined by a pad for use in solid-state memoriesMACRONIX INTERNATION CO LTD·Filed 2004·Granted May 2, 2006·118 cites·4 claims
- 1094US7932507B2Current constricting phase change memory element structureIBM·Filed 2010·Granted Apr 26, 2011·14 cites·14 claims
- 1194US7696503B2Multi-level memory cell having phase change element and asymmetrical thermal boundaryMACRONIX INT CO LTD·Filed 2007·Granted Apr 13, 2010·26 cites·9 claims
- 1292US7964468B2Multi-level memory cell having phase change element and asymmetrical thermal boundaryMACRONIX INT CO LTD·Filed 2010·Granted Jun 21, 2011·11 cites·10 claims
- 1392US7605079B2Manufacturing method for phase change RAM with electrode layer processMACRONIX INT CO LTD·Filed 2006·Granted Oct 20, 2009·25 cites·25 claims
- 1491US7683360B2Horizontal chalcogenide element defined by a pad for use in solid-state memoriesMACRONIX INT CO LTD·Filed 2006·Granted Mar 23, 2010·19 cites·8 claims
- 1591US7236394B2Transistor-free random access memoryMACRONIX INT CO LTD·Filed 2003·Granted Jun 26, 2007·61 cites·16 claims
- 1690US8279656B2Nonvolatile stacked nand memoryCHIEN WEI-CHIH·Filed 2010·Granted Oct 2, 2012·16 cites·22 claims
- 1790US7656701B2Method for programming a multilevel phase change memory deviceMACRONIX INT CO LTD·Filed 2007·Granted Feb 2, 2010·16 cites·16 claims
- 1890US7456460B2Phase change memory element and method of making the sameIBM·Filed 2007·Granted Nov 25, 2008·20 cites·2 claims
- 1989US8077506B2Method for programming a multilevel phase change memory deviceLEE MING-HSIU·Filed 2010·Granted Dec 13, 2011·9 cites·5 claims
- 2089US7960224B2Operation method for multi-level switching of metal-oxide based RRAMMACRONIX INT CO LTD·Filed 2009·Granted Jun 14, 2011·21 cites·15 claims
- 2189US7929340B2Phase change memory cell and manufacturing methodMACRONIX INT CO LTD·Filed 2010·Granted Apr 19, 2011·12 cites·9 claims
- 2288US10764507B1Image processing system capable of generating a snapshot image with high image quality by using a zero-shutter-lag snapshot operationKNERON TAIWAN CO LTD·Filed 2019·Granted Sep 1, 2020·7 cites·20 claims
- 2388US8134865B2Operating method of electrical pulse voltage for RRAM applicationCHANG KUO-PIN·Filed 2009·Granted Mar 13, 2012·7 cites·31 claims
- 2488US7875873B2Phase change materials and associated memory devicesIBM·Filed 2008·Granted Jan 25, 2011·6 cites·20 claims
- 2587US8331127B2Nonvolatile memory device having a transistor connected in parallel with a resistance switching deviceCHEN YI-CHOU·Filed 2010·Granted Dec 11, 2012·12 cites·30 claims
- 2687US7745807B2Current constricting phase change memory element structureIBM·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 2787US7701759B2Memory cell device and programming methodsMACRONIX INT CO LTD·Filed 2007·Granted Apr 20, 2010·15 cites·14 claims
- 2886US8077505B2Bipolar switching of phase change deviceCHEN YI-CHOU·Filed 2009·Granted Dec 13, 2011·25 cites·20 claims
- 2985US8107283B2Method for setting PCRAM devicesCHEN YI-CHOU·Filed 2009·Granted Jan 31, 2012·16 cites·22 claims
- 3082US7825398B2Memory cell having improved mechanical stabilityMACRONIX INT CO LTD·Filed 2008·Granted Nov 2, 2010·7 cites·17 claims
- 3181US7272037B2Method for programming a multilevel phase change memory deviceMACRONIX INT CO LTD·Filed 2004·Granted Sep 18, 2007·20 cites·21 claims
- 3276US10867325B2Mobile group-purchase system and implementing method thereofCHEN YI CHOU·Filed 2017·Granted Dec 15, 2020·1 cites·3 claims
- 3376US8907316B2Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regionsLUNG HSIANG-LAN·Filed 2008·Granted Dec 9, 2014·6 cites·31 claims
- 3474US7180767B2Multi-level memory device and methods for programming and reading the sameMACRONIX INT CO LTD·Filed 2003·Granted Feb 20, 2007·20 cites·2 claims
- 3573US7138687B2Thin film phase-change memoryMACRONIX INT CO LTD·Filed 2004·Granted Nov 21, 2006·14 cites·14 claims
- 3671US9368046B2Color tactile vision systemCHEN YI-CHOU·Filed 2010·Granted Jun 14, 2016·1 cites·7 claims
- 3768US8295075B2Resistive memory and method for controlling operations of the sameCHIEN WEI-CHIH·Filed 2010·Granted Oct 23, 2012·4 cites·16 claims
- 3868US8084761B2Structure for phase change memory and the method of forming sameLEE MING HSIU·Filed 2007·Granted Dec 27, 2011·3 cites·13 claims
- 3966US7561463B2Thin film phase-change memoryMACRONIX INT CO LTD·Filed 2007·Granted Jul 14, 2009·4 cites·20 claims
- 4065US8149610B2Nonvolatile memory deviceCHEN YI-CHOU·Filed 2010·Granted Apr 3, 2012·3 cites·33 claims
- 4165US7262427B2Structure for phase change memory and the method of forming sameMACRONIX INT CO LTD·Filed 2004·Granted Aug 28, 2007·7 cites·29 claims
- 4264US8378328B2Phase change memory random access device using single-element phase change materialIBM·Filed 2008·Granted Feb 19, 2013·5 cites·16 claims
- 4364US7968861B2Phase change memory elementIBM·Filed 2008·Granted Jun 28, 2011·4 cites·16 claims
- 4461US8097871B2Low operational current phase change memory structuresCHEN SHIH-HUNG·Filed 2009·Granted Jan 17, 2012·1 cites·10 claims
- 4558US8664689B2Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regionsLUNG HSIANG-LAN·Filed 2008·Granted Mar 4, 2014·1 cites·25 claims
- 4658US8180942B2Arbitration device and methodCHEN YI-CHOU·Filed 2009·Granted May 15, 2012·0 cites·20 claims
- 4755US7483316B2Method and apparatus for refreshing programmable resistive memoryMACRONIX INT CO LTD·Filed 2007·Granted Jan 27, 2009·3 cites·22 claims
- 4853US2021085109A1Environmentally friendly straw for easy disassemblyCHEN YI CHOU·Filed 2020·Application pending·0 cites
- 4953US2025370255A1Computing device and method for generating light field data displayable on near-eye light field displayPETARAY INC·Filed 2025·Application pending·0 cites
- 5052US6828081B2Method and system for lithography using phase-change materialMACRONIX INT CO LTD·Filed 2002·Granted Dec 7, 2004·4 cites·24 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Yi-Chou Chen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →